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采用CMOS-MEMS技术制造的带有温度传感器的热电能量微采集器。

Thermoelectric Energy Micro Harvesters with Temperature Sensors Manufactured Utilizing the CMOS-MEMS Technique.

作者信息

Shen Yi-Xuan, Tsai Yao-Chuan, Lee Chi-Yuan, Wu Chyan-Chyi, Dai Ching-Liang

机构信息

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.

Department of Bio-Industrial Mechatronics Engineering, National Chung Hsing University, Taichung 402, Taiwan.

出版信息

Micromachines (Basel). 2022 Aug 5;13(8):1258. doi: 10.3390/mi13081258.

Abstract

This study develops a TEMH (thermoelectric energy micro harvester) chip utilizing a commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process. The chip contains a TEMH and temperature sensors. The TEMH is established using a series of 54 thermocouples. The use of the temperature sensors monitors the temperature of the thermocouples. One temperature sensor is set near the cold part of the thermocouples, and the other is set near the hot part of the thermocouples. The performance of the TEMH relies on the TD (temperature difference) at the CHP (cold and hot parts) of the thermocouples. The more the TD at the CHP of the thermocouples increases, the higher the output voltage and output power of the TEMH become. To obtain a higher TD, the cold part of the thermocouples is designed as a suspended structure and is combined with cooling sheets to increase heat dissipation. The cooling sheet is constructed of a stack of aluminum layers and is mounted above the cold part of the thermocouple. A finite element method software, ANSYS, is utilized to compute the temperature distribution of the TEMH. The TEMH requires a post-process to obtain the suspended thermocouple structure. The post-process utilizes an RIE (reactive ion etch) to etch the two sacrificial materials, which are silicon dioxide and silicon substrate. The results reveal that the structure of the thermocouples is completely suspended and does not show any injury. The measured results reveal that the output voltage of the TEMH is 32.5 mV when the TD between the CHP of the thermocouples is 4 K. The TEMH has a voltage factor of 8.93 mV/mmK. When the TD between the CHP of the thermocouples is 4 K, the maximum output power of the TEMH is 4.67 nW. The TEMH has a power factor of 0.31 nW/mmK.

摘要

本研究利用商用0.18μm互补金属氧化物半导体(CMOS)工艺开发了一种热电能量微型采集器(TEMH)芯片。该芯片包含一个TEMH和温度传感器。TEMH由一系列54个热电偶组成。温度传感器用于监测热电偶的温度。一个温度传感器设置在热电偶的冷端附近,另一个设置在热电偶的热端附近。TEMH的性能取决于热电偶冷热端的温差(TD)。热电偶冷热端的温差越大,TEMH的输出电压和输出功率就越高。为了获得更高的温差,热电偶的冷端设计为悬浮结构,并与散热片结合以增加散热。散热片由一层叠的铝层构成,安装在热电偶冷端上方。利用有限元方法软件ANSYS计算TEMH的温度分布。TEMH需要进行后处理以获得悬浮的热电偶结构。后处理利用反应离子蚀刻(RIE)蚀刻两种牺牲材料,即二氧化硅和硅衬底。结果表明,热电偶结构完全悬浮,没有任何损伤。测量结果表明,当热电偶冷热端的温差为4K时,TEMH的输出电压为32.5mV。TEMH的电压因子为8.93mV/mmK。当热电偶冷热端的温差为4K时,TEMH的最大输出功率为4.67nW。TEMH的功率因子为0.31nW/mmK。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/884f/9415891/d55a6b06c510/micromachines-13-01258-g001.jpg

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