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不同温度下CMOS低噪声放大器性能退化的实验研究

An Experimental Investigation of the Degradation of CMOS Low-Noise Amplifier Specifications at Different Temperatures.

作者信息

Zhou Shaohua, Wang Jian

机构信息

School of Microelectronics, Tianjin University, Tianjin 300072, China.

Qingdao Institute for Ocean Technology, Tianjin University, Qingdao 266200, China.

出版信息

Micromachines (Basel). 2022 Aug 6;13(8):1268. doi: 10.3390/mi13081268.

DOI:10.3390/mi13081268
PMID:36014190
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9415183/
Abstract

To investigate the relationship between the specifications degradation of a low-noise amplifier (LNA) and temperature, we experimentally investigated the degradation characteristics of the specifications of the LNA at different temperatures. The small-signal gain (S21) of the LNA decreases with increasing temperature. This paper discusses and analyzes the experimental results in detail, and the reasons for the degradation of LNA specifications with temperature changes are known. Finally, we have tried to use the structure already available in the literature for the PA temperature compensation circuit for the temperature compensation of the LNA. The results show that the existing circuit structure for PA temperature compensation in the literature can also effectively compensate for the S21 and NF degradation of the LNA due to the temperature increase.

摘要

为了研究低噪声放大器(LNA)的性能退化与温度之间的关系,我们通过实验研究了LNA在不同温度下的性能退化特性。LNA的小信号增益(S21)随温度升高而降低。本文详细讨论并分析了实验结果,明确了LNA性能随温度变化而退化的原因。最后,我们尝试使用文献中已有的用于功率放大器(PA)温度补偿电路的结构来对LNA进行温度补偿。结果表明,文献中现有的用于PA温度补偿的电路结构也能有效补偿LNA因温度升高而导致的S21和噪声系数(NF)退化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/fb312b693756/micromachines-13-01268-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/f1d3404375e7/micromachines-13-01268-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/b20418760889/micromachines-13-01268-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/a7b63adf182c/micromachines-13-01268-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/6122d1345234/micromachines-13-01268-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/0d59eed841c5/micromachines-13-01268-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/0f5b8a37a420/micromachines-13-01268-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/4b806911037c/micromachines-13-01268-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/95c223deeebf/micromachines-13-01268-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/7be2a9b0b13b/micromachines-13-01268-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/fb312b693756/micromachines-13-01268-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/f1d3404375e7/micromachines-13-01268-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/b20418760889/micromachines-13-01268-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/a7b63adf182c/micromachines-13-01268-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/6122d1345234/micromachines-13-01268-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/0d59eed841c5/micromachines-13-01268-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/0f5b8a37a420/micromachines-13-01268-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/4b806911037c/micromachines-13-01268-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/95c223deeebf/micromachines-13-01268-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/7be2a9b0b13b/micromachines-13-01268-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7cc3/9415183/fb312b693756/micromachines-13-01268-g010.jpg

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本文引用的文献

1
On-Chip Temperature Compensation for Small-Signal Gain Variation Reduction.用于减少小信号增益变化的片上温度补偿
Micromachines (Basel). 2022 Jul 13;13(7):1101. doi: 10.3390/mi13071101.