Zhou Shaohua, Yang Cheng, Wang Jian
School of Microelectronics, Tianjin University, Tianjin 300072, China.
Qingdao Institute for Ocean Technology, Tianjin University, Qingdao 266200, China.
Micromachines (Basel). 2022 May 24;13(6):815. doi: 10.3390/mi13060815.
To investigate the critical specifications of a power amplifier (PA) under rapidly changing temperature conditions, we fabricated and tested a 0.3-1.1 GHz complementary metal-oxide-semiconductor (CMOS) PA under thermal shock tests. The results show that high- and low-temperature shocks can accelerate the degradation of critical specifications of PAs and that the critical specifications of PAs degrade with the increasing number of shocks. The main reason for the degradation of critical specifications of PAs with increasing thermal shock tests is the mismatch of thermal expansion coefficients of printed circuit boards (PCB) with FR-4 as a substrate. The results of this paper can provide a reference for the development of temperature-robust PAs design guidelines for the implementation of temperature-robust PAs using low-cost silicon technology.
为了研究功率放大器（PA）在快速变化温度条件下的关键规格，我们制作并测试了一款0.3 - 1.1 GHz的互补金属氧化物半导体（CMOS）PA，进行了热冲击测试。结果表明，高低温冲击会加速PA关键规格的退化，且PA的关键规格会随着冲击次数的增加而退化。随着热冲击测试次数增加，PA关键规格退化的主要原因是使用FR - 4作为基板的印刷电路板（PCB）热膨胀系数不匹配。本文的结果可为开发温度稳健的PA设计指南提供参考，以便使用低成本硅技术实现温度稳健的PA。
