Lin Qian, Jia Lining, Wu Haifeng, Wang Xiaozheng
College of Physics and Electronic Information Engineer, Qinghai Minzu University, Xining 810007, China.
Chengdu Ganide Technology Company, Ltd., Chengdu 610073, China.
Micromachines (Basel). 2022 Jul 15;13(7):1121. doi: 10.3390/mi13071121.
In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4-3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. The typical temperatures of -39.2 °C, -32.9 °C, -25.3 °C, -11.3 °C, -4.9 °C, 0 °C and 23 °C are chosen as the alpine condition. The major performance indexes including the direct current (DC) characteristics, S-parameters, stability, radio frequency (RF) output characteristics, output third-order intersection point (OIP3) and noise figure (), which were inspected and analyzed in detail. The results show that the DC characteristics, small-signal gain (S21), RF output characteristics and all deteriorate with the rising temperature due to the decrease in two-dimensional electron gas mobility (μ). Contrary to this trend, the special design makes stability and OIP3 increase. For further application of this MMIC LNA under alpine conditions, several measures can be utilized to remedy performance degradation. This paper can provide some significant engineering value for the reliable design of MMICs.
为了研究单片微波集成电路(MMIC)在高山条件下的温度特性,对一款0.4 - 3.8 GHz砷化镓(GaAs)增强型赝配高电子迁移率晶体管(E-pHEMT)低噪声放大器(LNA)的性能参数在不同温度下进行了测试。选取-39.2℃、-32.9℃、-25.3℃、-11.3℃、-4.9℃、0℃和23℃这些典型温度作为高山条件。对包括直流(DC)特性、S 参数、稳定性、射频(RF)输出特性、输出三阶交调点(OIP3)和噪声系数()在内的主要性能指标进行了详细的检测与分析。结果表明,由于二维电子气迁移率(μ)降低,直流特性、小信号增益(S21)、射频输出特性和噪声系数均随温度升高而恶化。与这一趋势相反,特殊设计使稳定性和OIP3提高。为使这款MMIC LNA在高山条件下得到进一步应用,可采取若干措施来弥补性能退化。本文可为MMIC的可靠设计提供一些重要的工程价值。