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不同衬底温度制备的等离子体增强原子层沉积HfO薄膜的结晶度对电学性能的影响

Crystallinity Effect on Electrical Properties of PEALD-HfO Thin Films Prepared by Different Substrate Temperatures.

作者信息

Zhang Xiao-Ying, Han Jing, Peng Duan-Chen, Ruan Yu-Jiao, Wu Wan-Yu, Wuu Dong-Sing, Huang Chien-Jung, Lien Shui-Yang, Zhu Wen-Zhang

机构信息

Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.

National Measurement and Testing Center for Flat Panel Display Industry, Xiamen Institute of Measurement and Testing, Xiamen 361024, China.

出版信息

Nanomaterials (Basel). 2022 Nov 3;12(21):3890. doi: 10.3390/nano12213890.

DOI:10.3390/nano12213890
PMID:36364666
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9656191/
Abstract

Hafnium oxide (HfO) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. The substrate temperature dependent electrical properties of PEALD-HfO films were obtained by capacitance-voltage and current-voltage measurements. GIXRD patterns and XRR investigations show that increasing the substrate temperature improved the crystallinity and density of HfO films. The crystallinity of HfO films has a major effect on electrical properties of the films. HfO thin film deposited at 300 °C possesses the highest dielectric constant and breakdown electric field.

摘要

氧化铪（HfO）薄膜具有卓越的物理和化学性质，这使其在多种应用中具有实用性。在本工作中，通过等离子体增强原子层沉积（PEALD）在不同衬底温度下在硅上制备了HfO薄膜。通过光谱椭偏仪、掠入射X射线衍射（GIXRD）、X射线反射率（XRR）、场发射扫描电子显微镜、原子力显微镜和X射线光电子能谱测量了HfO薄膜的每周期生长、结构、形貌和结晶性能。通过电容-电压和电流-电压测量获得了PEALD-HfO薄膜与衬底温度相关的电学性质。GIXRD图谱和XRR研究表明，提高衬底温度可改善HfO薄膜的结晶度和密度。HfO薄膜的结晶度对薄膜的电学性质有重大影响。在300°C沉积的HfO薄膜具有最高的介电常数和击穿电场。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/0e76ce733e29/nanomaterials-12-03890-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/d41a3cddd687/nanomaterials-12-03890-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/2d65b251b5e1/nanomaterials-12-03890-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/d333918dbe73/nanomaterials-12-03890-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/ce5906c14e93/nanomaterials-12-03890-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/0e76ce733e29/nanomaterials-12-03890-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/d41a3cddd687/nanomaterials-12-03890-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/2d65b251b5e1/nanomaterials-12-03890-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/d333918dbe73/nanomaterials-12-03890-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/ce5906c14e93/nanomaterials-12-03890-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63d5/9656191/0e76ce733e29/nanomaterials-12-03890-g005.jpg

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