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基于石墨烯和自支撑单晶钛酸钡的超薄压电谐振器

Ultrathin Piezoelectric Resonators Based on Graphene and Free-Standing Single-Crystal BaTiO.

作者信息

Lee Martin, Renshof Johannes R, van Zeggeren Kasper J, Houmes Maurits J A, Lesne Edouard, Šiškins Makars, van Thiel Thierry C, Guis Ruben H, van Blankenstein Mark R, Verbiest Gerard J, Caviglia Andrea D, van der Zant Herre S J, Steeneken Peter G

机构信息

Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands.

Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, Delft, 2628 CD, The Netherlands.

出版信息

Adv Mater. 2022 Nov;34(44):e2204630. doi: 10.1002/adma.202204630. Epub 2022 Oct 3.

Abstract

Suspended piezoelectric thin films are key elements enabling high-frequency filtering in telecommunication devices. To meet the requirements of next-generation electronics, it is essential to reduce device thickness for reaching higher resonance frequencies. Here, the high-quality mechanical and electrical properties of graphene electrodes are combined with the strong piezoelectric performance of the free-standing complex oxide, BaTiO (BTO), to create ultrathin piezoelectric resonators. It is demonstrated that the device can be brought into mechanical resonance by piezoelectric actuation. By sweeping the DC bias voltage on the top graphene electrode, the BTO membrane is switched between the two poled ferroelectric states. Remarkably, ferroelectric hysteresis is also observed in the resonance frequency, magnitude and Q-factor of the first membrane mode. In the bulk acoustic mode, the device vibrates at 233 GHz. This work demonstrates the potential of combining van der Waals materials with complex oxides for next-generation electronics, which not only opens up opportunities for increasing filter frequencies, but also enables reconfiguration by poling, via ferroelectric memory effect.

摘要

悬浮式压电薄膜是实现电信设备高频滤波的关键元件。为满足下一代电子产品的要求,减小器件厚度以达到更高的共振频率至关重要。在此,将石墨烯电极的高质量机械和电学性能与自支撑复合氧化物钛酸钡(BTO)的强压电性能相结合,制造出超薄压电谐振器。结果表明,该器件可通过压电驱动进入机械共振状态。通过在顶部石墨烯电极上扫描直流偏置电压,BTO薄膜在两个极化铁电状态之间切换。值得注意的是,在第一薄膜模式的共振频率、幅度和品质因数中也观察到了铁电磁滞现象。在体声波模式下,该器件的振动频率为233吉赫兹。这项工作展示了将范德华材料与复合氧化物相结合用于下一代电子产品的潜力,这不仅为提高滤波器频率带来了机遇,还能通过铁电记忆效应实现极化重构。

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