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通过软X射线电子能谱和密度泛函理论计算揭示的单层Gr-NiPc异质界面中的π轨道介导电荷转移通道

π-Orbital mediated charge transfer channels in a monolayer Gr-NiPc heterointerface unveiled by soft X-ray electron spectroscopies and DFT calculations.

作者信息

Casotto Andrea, Drera Giovanni, Perilli Daniele, Freddi Sonia, Pagliara Stefania, Zanotti Michele, Schio Luca, Verdini Alberto, Floreano Luca, Di Valentin Cristiana, Sangaletti Luigi

机构信息

I-LAMP and Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, via della Garzetta 48, 25133 Brescia, Italy.

Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, USA.

出版信息

Nanoscale. 2022 Sep 22;14(36):13166-13177. doi: 10.1039/d2nr02647c.

Abstract

With the aim to identify charge transfer channels underlying device development and operation, X-Ray Photoelectron Spectroscopy (XPS), Near-Edge X-Ray Absorption Fine Structure (NEXAFS), and Resonant Photoelectron Spectroscopy (ResPES) have been employed to characterize a novel heterointerface obtained by the controlled evaporation of a Nickel Phthalocyanine (NiPc) monolayer on a single layer of Graphene (Gr) on SiC substrate. Indeed, the Gr-NiPc interface could be a promising candidate for different applications in the field of photonics, optoelectronics, and sensing, provided that clear information on the charge transfer mechanisms at the Gr-NiPc interface can be obtained. The analysis of the spectroscopic data has shown the effective functionalization and the horizontally-flat disposition of the NiPc complexes over the Gr layer. With this geometry, the main intermolecular interaction experienced by the NiPc species is the coupling with the Gr substrate, through π-symmetry orbitals, as revealed by the different behaviour of the valence band photoemission at resonance with the N K-edge and Ni L-edge. These results have been supported by the analysis of density functional theory (DFT) calculations, that allowed for a rationalization of the experimental data, showing that charge transfer at the interface occurs from the doubly degenerate e LUMO orbital, involving mainly N and C (pyrrole ring) p states, to the holes in the p-doped graphene layer.

摘要

为了确定器件开发和运行背后的电荷转移通道,采用了X射线光电子能谱(XPS)、近边X射线吸收精细结构(NEXAFS)和共振光电子能谱(ResPES)来表征一种新型异质界面,该异质界面是通过在SiC衬底上的单层石墨烯(Gr)上可控蒸发镍酞菁(NiPc)单层而获得的。事实上,如果能够获得关于Gr-NiPc界面电荷转移机制的清晰信息,那么Gr-NiPc界面可能是光子学、光电子学和传感领域不同应用的一个有前途的候选者。光谱数据分析表明,NiPc配合物在Gr层上实现了有效的功能化和水平平整排列。在这种几何结构下,NiPc物种经历的主要分子间相互作用是通过π对称轨道与Gr衬底耦合,这一点通过价带光发射在与N K边和Ni L边共振时的不同行为得以揭示。这些结果得到了密度泛函理论(DFT)计算分析的支持,该计算能够对实验数据进行合理化解释,表明界面处的电荷转移发生在双重简并的e LUMO轨道,主要涉及N和C(吡咯环)的p态,转移到p型掺杂石墨烯层的空穴上。

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