Li Mingming, Zheng Jun, Liu Xiangquan, Niu Chaoqun, Zhu Yupeng, Pang Yaqing, Liu Zhi, Yang Yazhou, Zuo Yuhua, Cheng Buwen
Opt Lett. 2022 Sep 1;47(17):4315-4318. doi: 10.1364/OL.469027.
In this work, GeSn resonant cavity enhanced (RCE) p-i-n photodetectors (PDs) with 3.7% Sn content in a GeSn layer were fabricated on a silicon on insulator (SOI) substrate. The gold (Au) layer and the deposited SiO layer constitute the bottom reflector and top reflector of the RCE detectors, respectively. The GeSn RCE PD has three resonant peaks and its responsivity is improved about 4.5 times at 1630 nm, compared with GeSn PDs without a gold bottom mirror. The cutoff wavelength of GeSn RCE PDs is up to 1820 nm, while it is only 1730 nm for GeSn PDs without a gold reflector. The responsivity of RCE PDs at 1630 nm reaches 0.126 A/W and 3-dB bandwidth at about 36 GHz is achieved. These results indicate that the RCE structure is an effective approach for enhancing the GeSn PD performance operated at the L band.
在这项工作中，在绝缘体上硅（SOI）衬底上制备了GeSn层中锡含量为3.7%的GeSn共振腔增强（RCE）p-i-n光电探测器（PD）。金（Au）层和沉积的SiO层分别构成RCE探测器的底部反射器和顶部反射器。与没有金底镜的GeSn PD相比，GeSn RCE PD有三个共振峰，其在1630 nm处的响应度提高了约4.5倍。GeSn RCE PD的截止波长高达1820 nm，而没有金反射器的GeSn PD的截止波长仅为1730 nm。RCE PD在1630 nm处的响应度达到0.126 A/W，并在约36 GHz处实现了3 dB带宽。这些结果表明，RCE结构是提高L波段工作的GeSn PD性能的有效方法。
