Huang Qinxing, Zheng Jun, Zhu Yupeng, Liu Xiangquan, Liu ZhiPeng, Yang Yazhou, Cui Jinlai, Liu Zhi, Zuo Yuhua, Cheng Buwen
Opt Lett. 2024 Mar 1;49(5):1365-1368. doi: 10.1364/OL.516928.
In this work, GeSn lateral p-i-n photodetectors (PDs) on insulator were fabricated with an active GeSn layer grown by the rapid melting growth (RMG) method. Taking advantages of the defect-free GeSn strips, GeSn PDs with 5.3 Sn content have low dark current and high responsivities, which are about 0.48, 0.47, and 0.24 A/W for wavelengths of 1550, 1630, and 2000 nm, respectively. The radio frequency of the lateral GeSn PDs was also studied and a 3 dB bandwidth of about 3.8 GHz was achieved. These results indicate that the GeSn grown by the rapid melting growth method is capable of fabricating high-performance Si-based optoelectronic devices.
在这项工作中，通过快速熔化生长（RMG）方法生长有源GeSn层，在绝缘体上制备了GeSn横向p-i-n光电探测器（PDs）。利用无缺陷的GeSn条带，含5.3% Sn的GeSn PDs具有低暗电流和高响应度，对于1550、1630和2000 nm波长，其响应度分别约为0.48、0.47和0.24 A/W。还研究了横向GeSn PDs的射频特性，实现了约3.8 GHz的3 dB带宽。这些结果表明，通过快速熔化生长方法生长的GeSn能够制造高性能的硅基光电器件。
