Lux Alexander, Luxová Miroslava, Abe Jun, Tanimoto Eiichi, Hattori Taiichiro, Inanaga Shinobu
Department of Plant Physiology, Faculty of Natural Sciences, Comenius University, Mlynská dolina B-2, 842 15 Bratislava, Slovak Republic.
Institute of Botany, Slovak Academy of Sciences, Dúbravská cesta 14, 842 23 Bratislava, Slovak Republic.
New Phytol. 2003 Jun;158(3):437-441. doi: 10.1046/j.1469-8137.2003.00764.x.
• The dynamics of silica deposition and Si aggregates formation in inner tangential walls of root endodermal cells, which occurs as an additional stage of endodermal development in sorghum (Sorghum bicolor), were studied. • An environmental scanning electron microscope (ESEM) and X-ray microanalyzer (EDAX) were used to study sorghum roots grown hydroponically with Si (+ Si medium) and without Si (- Si medium). • Silica aggregates were absent in roots of plants cultivated in - Si medium. However, their additional formation on fully mature and thickened endodermal cell walls took place when plants grown in - Si medium were transferred to + Si medium. The beginning of Si aggregates formation was observed and Si deposition detected 2 h after transfer to + Si medium. • By dipping the apical root half in + Si medium, the silica aggregates were formed in the endodermis at the basal part of the root. This supports the hypothesis of outward Si transport from the xylem to the endodermis rather than radial inward Si movement and its deposition at the point of the apoplastic barrier represented by the endodermis.
• 研究了高粱(Sorghum bicolor)根内皮层细胞内切向壁中二氧化硅沉积和硅聚集体形成的动态过程,这是内皮层发育的一个额外阶段。
• 使用环境扫描电子显微镜(ESEM)和X射线微分析仪(EDAX)研究了在添加硅(+Si培养基)和不添加硅(-Si培养基)的水培条件下生长的高粱根。
• 在 -Si培养基中培养的植物根中没有硅聚集体。然而,当在 -Si培养基中生长的植物转移到 +Si培养基中时,它们在完全成熟和增厚的内皮层细胞壁上额外形成。转移到 +Si培养基2小时后观察到硅聚集体形成的开始并检测到硅沉积。
• 通过将根尖的一半浸入 +Si培养基中,在根基部的内皮层中形成了硅聚集体。这支持了硅从木质部向外运输到内皮层的假设,而不是硅径向向内移动并沉积在内皮层所代表的质外体屏障处的假设。