Soukup Milan, Martinka Michal, Bosnic Dragana, Caplovicová Mária, Elbaum Rivka, Lux Alexander
Department of Plant Physiology, Faculty of Natural Sciences, Comenius University in Bratislava, Ilkovicova 6, 84215 Bratislava, Slovak Republic.
The Robert H. Smith Institute of Plant Sciences and Genetics in Agriculture, The Hebrew University of Jerusalem, 76100 Rehovot, Israel.
Ann Bot. 2017 Nov 10;120(5):739-753. doi: 10.1093/aob/mcx060.
Deposition of silica in plant cell walls improves their mechanical properties and helps plants to withstand various stress conditions. Its mechanism is still not understood and silica-cell wall interactions are elusive. The objective of this study was to investigate the effect of silica deposition on the development and structure of sorghum root endodermis and to identify the cell wall components involved in silicification.
Sorghum bicolor seedlings were grown hydroponically with (Si+) or without (Si-) silicon supplementation. Primary roots were used to investigate the transcription of silicon transporters by quantitative RT-PCR. Silica aggregation was induced also under in vitro conditions in detached root segments. The development and architecture of endodermal cell walls were analysed by histochemistry, microscopy and Raman spectroscopy. Water retention capability was compared between silicified and non-silicified roots. Raman spectroscopy analyses of isolated silica aggregates were also carried out.
Active uptake of silicic acid is provided at the root apex, where silicon transporters Lsi1 and Lsi2 are expressed. The locations of silica aggregation are established during the development of tertiary endodermal cell walls, even in the absence of silicon. Silica aggregation takes place in non-lignified spots in the endodermal cell walls, which progressively accumulate silicic acid, and its condensation initiates at arabinoxylan-ferulic acid complexes. Silicification does not support root water retention capability; however, it decreases root growth inhibition imposed by desiccation.
A model is proposed in which the formation of silica aggregates in sorghum roots is predetermined by a modified cell wall architecture and takes place as governed by endodermal development. The interaction with silica is provided by arabinoxylan-ferulic acid complexes and interferes with further deposition of lignin. Due to contrasting hydrophobicity, silicification and lignification do not represent functionally equivalent modifications of plant cell walls.
二氧化硅在植物细胞壁中的沉积可改善其机械性能,并帮助植物抵御各种胁迫条件。其机制仍不明确,二氧化硅与细胞壁的相互作用也难以捉摸。本研究的目的是调查二氧化硅沉积对高粱根内皮层发育和结构的影响,并确定参与硅化作用的细胞壁成分。
将双色高粱幼苗在添加(Si+)或不添加(Si-)硅的水培条件下培养。用主根通过定量RT-PCR研究硅转运蛋白的转录。在离体根段的体外条件下也诱导二氧化硅聚集。通过组织化学、显微镜和拉曼光谱分析内皮层细胞壁的发育和结构。比较硅化和未硅化根的保水能力。还对分离出的二氧化硅聚集体进行了拉曼光谱分析。
在根尖处提供了硅酸的主动吸收,此处表达硅转运蛋白Lsi1和Lsi2。即使在没有硅的情况下,二氧化硅聚集的位置也在三生内皮层细胞壁发育过程中确定。二氧化硅聚集发生在内皮层细胞壁的非木质化部位,这些部位逐渐积累硅酸,其缩合在阿拉伯木聚糖-阿魏酸复合物处开始。硅化作用不支持根的保水能力;然而,它减少了干燥对根生长的抑制。
提出了一个模型,其中高粱根中二氧化硅聚集体的形成由修饰的细胞壁结构预先决定,并在内皮层发育的控制下发生。与二氧化硅的相互作用由阿拉伯木聚糖-阿魏酸复合物提供,并干扰木质素的进一步沉积。由于疏水性不同,硅化和木质化并不代表植物细胞壁在功能上等效的修饰。