Department of Physics, University of Rajasthan, Jaipur, 302004, Rajasthan, India.
Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur, 302004, Rajasthan, India.
Environ Sci Pollut Res Int. 2023 Sep;30(44):98632-98646. doi: 10.1007/s11356-022-22767-6. Epub 2022 Sep 5.
Polycrystalline ZnCuO (x = 0.0, 0.02, and 0.05) samples have been prepared using the solid-state reaction procedure. The X-ray diffraction (XRD) patterns of the samples confirm that Cu ions are successfully included in the ZnO hexagonal wurtzite structure. Rietveld analysis of the XRD patterns confirms the phase purity of the synthesized samples and a slight variation in their lattice parameter upon Cu doping. The morphology study by scanning electron microscopy (SEM) depicts transfiguration with Cu doping. The existence of oxygen vacancies (V) in the Cu-doped samples is indicated by X-ray photoelectron spectroscopy (XPS). The magnetization measurements reveal the diamagnetic nature of pure ZnO while the Cu-doped samples depict a room-temperature ferromagnetic (RTFM) behavior. The 2% Cu-doped sample shows higher values of both the saturation magnetization and the V as compared to the 5% Cu-doped sample. The observed magnetization seems to show a direct relationship with the V. The photoluminescence (PL) and ultraviolet (UV) spectroscopic measurements were performed for their optical analysis. The presence of V in the Cu-doped samples is revealed by the PL findings also that is in agreement with the XPS results. The UV analysis shows that Cu doping in the ZnO influences the band gap. The observed RTFM induced by Cu doping in ZnO renders it a potential system for spintronic devices useful for energy-efficient data storage devices and energy harvesting eco-friendly applications.
采用固态反应法制备了多晶 ZnCuO(x=0.0、0.02 和 0.05)样品。样品的 X 射线衍射(XRD)图谱证实,Cu 离子成功地掺入了 ZnO 六方纤锌矿结构中。XRD 图谱的 Rietveld 分析证实了合成样品的相纯度以及 Cu 掺杂后其晶格参数的微小变化。扫描电子显微镜(SEM)的形貌研究表明,Cu 掺杂会发生变形。X 射线光电子能谱(XPS)表明,Cu 掺杂样品中存在氧空位(V)。磁化测量表明纯 ZnO 具有抗磁性,而 Cu 掺杂样品则表现出室温铁磁性(RTFM)行为。与 5% Cu 掺杂样品相比,2% Cu 掺杂样品的饱和磁化强度和 V 更高。观察到的磁化强度似乎与 V 呈直接关系。进行了光致发光(PL)和紫外(UV)光谱测量以进行光学分析。PL 研究结果表明,Cu 掺杂样品中存在 V,这与 XPS 结果一致。UV 分析表明,Cu 掺杂 ZnO 会影响带隙。ZnO 中 Cu 掺杂引起的观察到的 RTFM 使其成为用于节能数据存储设备和能源收集环保应用的自旋电子器件的潜在系统。