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研究 Ce 掺杂 ZnO 纳米荧光粉在紫外光传感器中的高效光电导和增强发光特性。

Investigation of efficient photoconduction and enhanced luminescence characteristics of Ce-doped ZnO nanophosphors for UV sensors.

机构信息

Department of Physics, Indira Gandhi National Tribal University, Amarkantak, India.

Department of Physics, University of Allahabad, Prayagraj, India.

出版信息

Luminescence. 2023 Jul;38(7):1405-1415. doi: 10.1002/bio.4483. Epub 2023 Apr 8.

Abstract

This study involves the single-step, mass-scale productive synthesis, photoconduction, and luminescence characteristics of pure and cerium rare-earth-ion-doped ZnO (CZO) nanophosphors with different Ce concentrations (Ce: 0, 2, 4, 6, and 8 wt.%) synthesized using the solid-state reaction method. The synthesized nanophosphors were characterized for their structural, morphological, optical, and photoconductivity (PC) properties using X-ray diffraction (XRD), field-effect scanning electron microscopy (FE-SEM), energy dispersive spectroscopy, Fourier-transform infrared (FT-IR), photoluminescence (PL), and PC measurements. The sharp diffraction peaks of XRD results exhibit the formation of crystalline hexagonal wurtzite ZnO nanostructures. The decrease in diffraction peak intensities of CZO with an increase in Ce concentrations signifies the deterioration of the ZnO crystal. FE-SEM images exhibit the good crystalline quality of nanophosphors composed of spherical- and elongated-shaped nanoparticles that are distributed consistently on the surface. The energy dispersive X-ray pattern of the 4 wt.% Ce-doped ZnO (CZO ) sample confirms the doping of Ce in ZnO. The presence of chemical bonds and functional groups corresponds to transmittance peaks established using FT-IR spectroscopy. Deconvoluted PL spectra show two major emission peaks, one in the UV region, which is near-band-edge, and the other in the visible region ranging from ~456 to 561 nm. In PC studies, current-voltage (I-V) and current-time (I-T) characteristics, that is, rise/decayin current under dark as well as UV light conditions, are also investigated. Efficient photoconduction is observed in CZO samples. The obtained results indicate the suitability to luminescent and photosensor applications.

摘要

本研究涉及使用固相反应法合成的具有不同 Ce 浓度(Ce:0、2、4、6 和 8 wt.%)的纯和铈稀土离子掺杂 ZnO(CZO)纳米荧光粉的单步、大规模生产合成、光电导和发光特性。使用 X 射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)、能量色散光谱、傅里叶变换红外(FT-IR)、光致发光(PL)和光电导(PC)测量对合成的纳米荧光粉进行结构、形态、光学和光电导(PC)特性的表征。XRD 结果的尖锐衍射峰表明形成了结晶六方纤锌矿 ZnO 纳米结构。随着 Ce 浓度的增加,CZO 的衍射峰强度降低,表明 ZnO 晶体恶化。FE-SEM 图像显示出由球形和拉长形纳米颗粒组成的纳米荧光粉具有良好的结晶质量,这些纳米颗粒均匀分布在表面上。4 wt.% Ce 掺杂 ZnO(CZO)样品的能量色散 X 射线图谱证实了 Ce 在 ZnO 中的掺杂。化学键和官能团的存在与 FT-IR 光谱建立的透射峰相对应。解卷积的 PL 光谱显示出两个主要发射峰,一个在 UV 区域,接近带边,另一个在可见区域,范围从~456 到 561nm。在 PC 研究中,还研究了电流-电压(I-V)和电流-时间(I-T)特性,即在暗和紫外光条件下的上升/下降电流。在 CZO 样品中观察到有效的光电导。所得结果表明适用于发光和光敏传感器应用。

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