Fakhri Elham, Plugaru Rodica, Sultan Muhammad Taha, Hanning Kristinsson Thorsteinn, Örn Árnason Hákon, Plugaru Neculai, Manolescu Andrei, Ingvarsson Snorri, Svavarsson Halldor Gudfinnur
Department of Engineering, Reykjavik University, Menntavegur 1, 102 Reykjavik, Iceland.
National Institute for Research and Development in Microtechnologies-IMT Bucharest, 077190 Voluntari, Romania.
Sensors (Basel). 2022 Aug 23;22(17):6340. doi: 10.3390/s22176340.
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1m pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.
众所周知，硅纳米线（SiNWs）具有很大的压阻（PZR）效应，这使其适用于各种传感应用。在此，我们报告了对作为压力传感器的随机分布且相互连接的垂直硅纳米线阵列进行压阻研究的结果。这些样品是使用银催化的自上而下蚀刻工艺从p型（100）硅片制备而成的。通过在施加单轴以及等静压的情况下测量其I-V特性，分析了这些硅纳米线阵列的压阻响应。与分离的或周期性的纳米线相比，相互连接的硅纳米线表现出更高的机械稳定性。还对来自不同批次的几个样品测试了制造工艺的可重复性和测量的统计分布。在施加单轴力时，观察到传感分辨率低至约1m压力，并且对于低于大气压的等静压，确定电阻变化超过两个数量级。
