Ikram Muhammad, Shahzadi Iram, Haider Ali, Hayat Shaukat, Haider Junaid, Ul-Hamid Anwar, Shahzadi Anum, Nabgan Walid, Dilpazir Sobia, Ali Salamat
Solar Cell Applications Research Lab, Department of Physics, Government College University Lahore Lahore 54000 Punjab Pakistan
College of Pharmacy, University of the Punjab 54000 Lahore Pakistan.
RSC Adv. 2022 Aug 16;12(36):23129-23142. doi: 10.1039/d2ra03975c.
The novel VO/chitosan (CS) co-doped tin oxide (SnO) quantum dots (QDs) were synthesized co-precipitation technique. The optical, structural, morphological, and catalytic properties of the concerned specimens were examined by UV-Vis, PL, FTIR, X-ray diffraction, HR-TEM, and EDS. Structural analysis through XRD confirmed the tetragonal structure of SnO; meanwhile, HR-TEM measurements unveiled quantum dot morphology. Rotational and vibrational modes related to functional groups of (O-H, C-H, Sn-O, and Sn-O-Sn) have been assessed with FTIR spectra. Through UV-Vis spectroscopy, a reduction in band-gap (4.39 eV to 3.98 eV) and redshift in co-doped spectra of SnO were identified. Both CS/SnO and VO-doped CS@SnO showed promising catalytic activity in all media. Meanwhile, CS/SnO showed higher activity for use in hospital and industrial dye degradation in comparison to dopant-free Ch/SnO. For VO/CS@ SnO QDs, inhibition domains of G -ve were significantly confirmed as 1.40-4.15 mm and 1.85-5.45 mm; meanwhile, for G +ve were noticed as 2.05-4.15 mm and 2.40-5.35 mm at least and maximum concentrations, correspondingly. These findings demonstrate the efficient role of VO/CS@SnO QDs towards industrial dye degradation and antimicrobial activity.
采用共沉淀技术合成了新型VO/壳聚糖(CS)共掺杂的氧化锡(SnO)量子点(QDs)。通过紫外可见光谱(UV-Vis)、光致发光(PL)、傅里叶变换红外光谱(FTIR)、X射线衍射(XRD)、高分辨率透射电子显微镜(HR-TEM)和能谱仪(EDS)对相关样品的光学、结构、形态和催化性能进行了研究。通过XRD进行的结构分析证实了SnO的四方结构;同时,HR-TEM测量揭示了量子点的形态。利用FTIR光谱评估了与(O-H、C-H、Sn-O和Sn-O-Sn)官能团相关的旋转和振动模式。通过紫外可见光谱,确定了SnO共掺杂光谱中的带隙减小(从4.39 eV降至3.98 eV)和红移。CS/SnO和VO掺杂的CS@SnO在所有介质中均表现出良好的催化活性。同时,与无掺杂的Ch/SnO相比,CS/SnO在医院和工业染料降解方面表现出更高的活性。对于VO/CS@SnO量子点,G -ve的抑制域在最低和最高浓度下分别显著确定为1.40 - 4.15 mm和1.85 - 5.45 mm;同时,对于G +ve,分别注意到为2.05 - 4.15 mm和2.40 - 5.35 mm。这些发现证明了VO/CS@SnO量子点在工业染料降解和抗菌活性方面的有效作用。