Lanza Mario, Hui Fei, Wen Chao, Ferrari Andrea C
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China.
Adv Mater. 2023 Mar;35(9):e2205402. doi: 10.1002/adma.202205402. Epub 2023 Jan 13.
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>10 devices mm ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
电阻开关（RS）器件是金属/绝缘体/金属单元，当在电极之间施加电刺激时，其电阻会发生变化，可用于存储和计算数据。RS器件的平面交叉阵列可提供高集成密度（>10个器件/平方毫米），通过三维堆叠可进一步提高集成密度。与传统的相变材料和金属氧化物相比，在RS器件中使用层状材料（LM）的优势在于其电学特性可得到更高精度的调节。本文定义了基于LM的RS器件的关键性能指标和实现步骤。识别并讨论了采用与工业兼容方法制造的基于LM的RS器件。重点关注以交叉结构排列的小型器件（尺寸<9微米），因为较大的器件可能会受到诸如晶界和片状结等伪像的影响。本文还讨论了如何提高器件性能以加速该技术的发展。
