Tsai Po-Cheng, Yan Coung-Ru, Chang Shoou-Jinn, Lin Shih-Yen
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan.
Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan.
Nanotechnology. 2022 Oct 4;33(50). doi: 10.1088/1361-6528/ac91d6.
Bottom-gate transistors with mono-layer MoSchannels and polycrystalline antimonene source/drain contact electrodes deposited at 75 °C are fabricated. Significant performance enhancement of field-effect mobility 11.80 cmV·sand >10ON/OFF ratio are observed for the device. Increasing photocurrents are also observed for the MoStransistor under light irradiation, which is attributed to the reduced carrier recombination at the metal/2D material interfaces. The results have demonstrated that besides the matching of work function values with the 2D material channel, the crystallinity of the contact electrodes is the other important parameter for the Ohmic contact formation of 2D material devices.
制备了具有单层MoS沟道以及在75°C下沉积的多晶锑源极/漏极接触电极的底栅晶体管。观察到该器件的场效应迁移率显著提高，达到11.80 cm²V⁻¹s⁻¹，开/关比大于10。在光照下，MoS晶体管的光电流也有所增加，这归因于金属/二维材料界面处载流子复合的减少。结果表明，除了功函数值与二维材料沟道的匹配外，接触电极的结晶度是二维材料器件欧姆接触形成的另一个重要参数。
