Zhang Yu-Wei, Li Jun-Yan, Wu Chao-Hsin, Chang Chiao-Yun, Chang Shu-Wei, Shih Min-Hsiung, Lin Shih-Yen
Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd., Taipei, 11529, Taiwan.
Sci Rep. 2020 Apr 6;10(1):5967. doi: 10.1038/s41598-020-63098-1.
We have demonstrated that with e-beam deposition of a thin AlO layer before atomic layer deposition, a uniform AlO film can be obtained on WSe/sapphire samples. Device performances are observed for WSe top-gate transistors by using oxide stacks as the gate dielectric. By using thermal evaporation, epitaxially grown multilayer antimonene can be prepared on both MoS and WSe surfaces. With multilayer antimonene as the contact metal, a significant increase in drain currents and ON/OFF ratios is observed for the device, which indicates that high contact resistance between metal/2D material interfaces is a critical issue for 2D devices. The observation of multilayer antimonene grown on different 2D material surfaces has demonstrated less dependence on the substrate lattice constant of the unique van der Waals epitaxy for 2D materials. The results have also demonstrated that stacking 2D materials with different materials plays an important role in the practical applications of 2D devices.
我们已经证明，通过在原子层沉积之前用电子束沉积一层薄的AlO层，可以在WSe/蓝宝石样品上获得均匀的AlO薄膜。通过使用氧化物堆叠作为栅极电介质，观察了WSe顶栅晶体管的器件性能。通过热蒸发，可以在MoS和WSe表面上制备外延生长的多层锑烯。以多层锑烯作为接触金属时，观察到器件的漏极电流和开/关比显著增加，这表明金属/二维材料界面之间的高接触电阻是二维器件的一个关键问题。在不同二维材料表面上生长多层锑烯的观察结果表明，二维材料独特的范德华外延对衬底晶格常数的依赖性较小。结果还表明，将二维材料与不同材料堆叠在二维器件的实际应用中起着重要作用。
