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光薄极限下的余辉效应:薄介质中共振响应的框架。

The Reststrahlen Effect in the Optically Thin Limit: A Framework for Resonant Response in Thin Media.

机构信息

Department of Applied Physics, Stanford University, Stanford, California 94305, United States.

SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.

出版信息

Nano Lett. 2022 Oct 26;22(20):8389-8393. doi: 10.1021/acs.nanolett.2c02819. Epub 2022 Sep 16.

Abstract

Sharp resonances can strongly modify the electromagnetic response of matter. A classic example is the Reststrahlen effect - high reflectivity in the mid-infrared in many polar crystals near their optical phonon resonances. Although this effect in bulk materials has been studied extensively, a systematic treatment for finite thickness remains challenging. Here we describe, experimentally and theoretically, the Reststrahlen response in hexagonal boron nitride across more than 5 orders of magnitude in thickness, down to a monolayer. We find that the high reflectivity plateau of the Reststrahlen band evolves into a single peak as the material enters the optically thin limit, within which two distinct regimes emerge: a strong-response regime dominated by coherent radiative decay and a weak-response regime dominated by damping. We show that this evolution can be explained by a simple two-dimensional sheet model that can be applied to a wide range of thin media.

摘要

尖锐的共振可以强烈改变物质的电磁响应。一个经典的例子是瑞利后向散射效应——在许多极性晶体的中红外附近,在光学声子共振附近具有高反射率。尽管这种在体材料中的效应已经被广泛研究,但对于有限厚度的系统处理仍然具有挑战性。在这里,我们通过实验和理论描述了六方氮化硼在超过 5 个数量级的厚度范围内的瑞利后向散射响应,厚度低至单层。我们发现,随着材料进入光学薄限,瑞利后向散射带的高反射率平台演变成一个单峰,在这个范围内出现了两个不同的区域:一个由相干辐射衰减主导的强响应区和一个由阻尼主导的弱响应区。我们表明,这种演化可以用一个简单的二维片模型来解释,该模型可以应用于广泛的薄介质。

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