Yu Jie, Zeng Yabing, Lin Wei, Lu Xin
State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistryand Chemical Engineering, Xiamen University, Xiamen 361005, Fujian, China.
College of Chemistry, Fuzhou University, Fuzhou 350108, Fujian, China.
Phys Chem Chem Phys. 2022 Oct 5;24(38):23182-23194. doi: 10.1039/d2cp02788g.
Selective methanol synthesis CO hydrogenation has been thoroughly investigated over defective In-doped m-ZrO using density functional theory (DFT). Three types of oxygen vacancies (Ovs) generated either at the top layer (O1_v and O4_v) or at the subsurface layer (O2_v) are chosen as surface models due to low Ov formation energy. Surface morphology reveals that O1_v has smaller oxygen vacancy size than O4_v. Compared with perfect In@m-ZrO, indium on both O1_v and O4_v is partially reduced, whereas the Bader charge of In on O2_v remains almost the same. Our calculations show that CO is moderate in adsorption energy (∼-0.8 eV) for all investigated surface models, which facilitates the formate pathway for both O1_v and O4_v. O2_v is not directly involved in CO methanolization but could readily transform into O1_v once CO/H feed gas is introduced. Based on the results, the synthesis of methanol from CO hydrogenation turns out to exhibit conspicuous vacancy size-dependency for both O1_v and O4_v. The reaction mechanism for small-sized O1_v is controlled by both the vacancy size effect and surface reducibility effect. Thus, HCOO* favors direct C-O bond cleavage (c-mechanism) before further hydrogenation to methanol, which is similar to the defective InO. The vacancy size effect is more competitive than the surface reducibility effect for large-sized O4_v. Therefore, HCOO* prefers protonation to HCOOH before C-O bond cleavage (p-mechanism) which is similar to the ZnO-ZrO solid solution. Furthermore, we also determined that stable-CHO*, which is too stable to be hydrogenated, originates from the O1_v surface. In contrast, CHO* with similar configuration is allowed to be further converted to methanol on O4_v. Overall, our findings offer a new perspective towards how reaction mechanisms are determined by the size of oxygen vacancies.
利用密度泛函理论(DFT)对缺陷铟掺杂介孔氧化锆上的选择性甲醇合成一氧化碳加氢反应进行了深入研究。由于氧空位(Ov)形成能较低,选择在顶层(O1_v和O4_v)或次表层(O2_v)产生的三种类型的氧空位作为表面模型。表面形态表明,O1_v的氧空位尺寸比O4_v小。与完美的In@m-ZrO相比,O1_v和O4_v上的铟都部分还原,而O2_v上铟的巴德电荷几乎保持不变。我们的计算表明,对于所有研究的表面模型,CO的吸附能适中(约-0.8 eV),这有利于O1_v和O4_v的甲酸盐途径。O2_v不直接参与CO甲醇化,但一旦引入CO/H原料气,它可以很容易地转化为O1_v。基于这些结果,CO加氢合成甲醇对O1_v和O4_v都表现出明显的空位尺寸依赖性。小尺寸O1_v的反应机理受空位尺寸效应和表面还原性效应共同控制。因此,HCOO在进一步氢化成甲醇之前倾向于直接C-O键断裂(c-机理),这与缺陷InO类似。对于大尺寸O4_v,空位尺寸效应比表面还原性效应更具竞争力。因此,HCOO在C-O键断裂之前(p-机理)比质子化生成HCOOH更受青睐,这与ZnO-ZrO固溶体类似。此外,我们还确定,过于稳定而无法氢化的稳定-CHO源自O1_v表面。相比之下,具有相似构型的CHO在O4_v上可以进一步转化为甲醇。总体而言,我们的研究结果为氧空位尺寸如何决定反应机理提供了一个新的视角。