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基于密度泛函理论的 InO 和 Zr-InO 催化剂上 CO 加氢合成甲醇的微动力学研究。

DFT-based microkinetic studies on methanol synthesis from CO hydrogenation over InO and Zr-InO catalysts.

机构信息

CAS Key Laboratory of Low-Carbon Conversion Science and Engineering, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 100 Haike Road, Shanghai 201210, China.

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.

出版信息

Phys Chem Chem Phys. 2023 May 31;25(21):14961-14968. doi: 10.1039/d3cp00831b.

DOI:10.1039/d3cp00831b
PMID:37204773
Abstract

Density functional theory (DFT) calculations and microkinetic simulations were performed to study the structure-performance relationship of InO and Zr-doped InO catalysts for methanol synthesis, focusing on the InO(110) and Zr-doped InO(110) surfaces. These surfaces are expected to follow the oxygen vacancy-based mechanism the HCOO route for CO hydronation to methanol. Our DFT calcualtions show that the Zr-InO(110) surface is more favorable for CO adsorption than the InO(110) surface, and although the energy barriers are not lowered, most intermediates in the HCOO route are stablized with the introduction of the Zr dopant. Microkinetic simulations suggest that the CHOH formation rate is improved by ∼10 times and CHOH selectivity increased significantly from 10% on InO(110) to 100% on the Zr1-InO(110) catalyst model at 550 K. We find that the higher CHOH formation rate and CHOH selectivity on the Zr1-InO(110) surface than those on the InO(110) surface can be attributed to the slightly increased O formation energy and the stablization of the reaction intermediates, whereas the much lower CHOH formation rate on the Zr3-InO(110) surface is due to the much higher O formation energy and the over binding of the HO at the O site.

摘要

采用密度泛函理论(DFT)计算和微观动力学模拟方法,研究了甲醇合成中 InO 和 Zr 掺杂 InO 催化剂的结构-性能关系,重点研究了 InO(110)和 Zr 掺杂 InO(110)表面。这些表面预计遵循基于氧空位的机制,即 HCOO 途径,用于 CO 水合生成甲醇。我们的 DFT 计算表明,Zr-InO(110)表面比 InO(110)表面更有利于 CO 的吸附,尽管能量势垒没有降低,但在引入 Zr 掺杂剂后,HCOO 途径中的大多数中间体都得到了稳定。微观动力学模拟表明,在 550 K 时,CHO 形成速率提高了约 10 倍,CHO 选择性从 InO(110)上的 10%显著提高到 Zr1-InO(110)催化剂模型上的 100%。我们发现,Zr1-InO(110)表面上的 CHOH 形成速率和 CHOH 选择性高于 InO(110)表面,可以归因于略微增加的 O 形成能和反应中间体的稳定,而 Zr3-InO(110)表面上的 CHOH 形成速率较低,则是由于 O 形成能高得多和 O 位上的 HO 过度结合所致。

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