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立方相和六方相InO催化剂上CO加氢过程中H解离吸附的第一性原理研究

First principles investigation of dissociative adsorption of H during CO hydrogenation over cubic and hexagonal InO catalysts.

作者信息

Qin Bin, Li Shenggang

机构信息

CAS Key Laboratory of Low-Carbon Conversion Science and Engineering, Shanghai Advanced Research Institue, Chinese Academy of Sciences, 100 Haike Road, Shanghai 201210, China.

出版信息

Phys Chem Chem Phys. 2020 Feb 14;22(6):3390-3399. doi: 10.1039/c9cp05867b. Epub 2020 Jan 27.

Abstract

Dissociative adsorption of molecular hydrogen (H) and migration of the adsorbed H adatom as a hydride or a proton on two of the most stable facets of the InO catalyst in the cubic (c-InO) and hexagonal (h-InO) phases for CO hydrogenation to methanol were investigated by extensive density functional theory (DFT) calculations. Due to the relatively small variation in the oxygen vacancy (O) formation energy with respect to surface O coverage of these InO surfaces, especially c-InO(110) and h-InO(012), no limit on the O coverage is expected to exist under the typical reaction conditions. Thus, we consider three scenarios for the dissociative adsorption of H and the migration of the H adsorbate, namely on the perfect (stoichiometric) InO surfaces, on the partially reduced InO surfaces with a single O site, and on the fully reduced InO surfaces. Our DFT calculations show that the oppositely charged In and O pair sites on the perfect and partially reduced InO surfaces facilitate the heterolytic dissociation of H, leading to the formation of the anionic hydride at the In site crucial for CO hydrogenation to methanol. Our comparative studies on the four InO surfaces suggest that the h-InO(104) surface is superior to the other three surfaces due to the facile formation of the O sites at low coverage and the favorable formation of the hydride adsorbate at the In site from H dissociation. These results indicate that this surface might be preferred for CO hydrogenation to methanol.

摘要

通过广泛的密度泛函理论(DFT)计算,研究了立方相(c-InO)和六方相(h-InO)的InO催化剂在两个最稳定晶面上分子氢(H₂)的解离吸附以及吸附的H原子作为氢化物或质子的迁移,用于将CO加氢制甲醇。由于这些InO表面的氧空位(O_v)形成能相对于表面O覆盖率的变化相对较小,特别是c-InO(110)和h-InO(012),预计在典型反应条件下不存在O覆盖率的限制。因此,我们考虑了H₂解离吸附和H吸附质迁移的三种情况,即在完美(化学计量)的InO表面上、在具有单个O空位的部分还原的InO表面上以及在完全还原的InO表面上。我们的DFT计算表明,完美和部分还原的InO表面上带相反电荷的In和O配对位点促进了H₂的异裂解离,导致在In位点形成阴离子氢化物,这对于CO加氢制甲醇至关重要。我们对四个InO表面的比较研究表明,h-InO(104)表面优于其他三个表面,这是由于在低覆盖率下容易形成O空位,以及H解离后在In位点有利于形成氢化物吸附质。这些结果表明,该表面可能是CO加氢制甲醇的优选表面。

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