Su Bao-Wang, Yao Bin-Wei, Zhang Xi-Lin, Huang Kai-Xuan, Li De-Kang, Guo Hao-Wei, Li Xiao-Kuan, Chen Xu-Dong, Liu Zhi-Bo, Tian Jian-Guo
The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology Tianjin 30071 China.
Nanoscale Adv. 2020 Mar 18;2(4):1733-1740. doi: 10.1039/d0na00201a. eCollection 2020 Apr 15.
Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.
具有范德华异质结构的二维（2D）双极结型晶体管（BJT）在未来纳米电子学的发展中起着重要作用。在此，介绍了一种利用飞秒激光加工制造由黑磷和MoS构建的对称双极结型晶体管（SBJT）的简便方法。该SBJT由于其对称结构而表现出良好的双向电流放大特性。我们在SBJT的一侧放置了一个顶栅，以改变发射极和集电极之间的主要载流子浓度差异，从而进一步研究静电掺杂对器件性能的影响。该SBJT还可以作为具有良好光探测性和光电流增益约为21的栅极可调光晶体管。利用扫描光电流图像来确定光晶体管中光电流放大的机制。这些结果推动了基于二维材料的多功能纳米电子学应用的发展。
