Huang Mingqiang, Li Shengman, Zhang Zhenfeng, Xiong Xiong, Li Xuefei, Wu Yanqing
Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
Nat Nanotechnol. 2017 Dec;12(12):1148-1154. doi: 10.1038/nnano.2017.208. Epub 2017 Oct 9.
A range of novel two-dimensional materials have been actively explored for More Moore and More-than-Moore device applications because of their ability to form van der Waals heterostructures with unique electronic properties. However, most of the reported electronic devices exhibit insufficient control of multifunctional operations. Here, we leverage the band-structure alignment properties of narrow-bandgap black phosphorus and large-bandgap molybdenum disulfide to realize vertical heterostructures with an ultrahigh rectifying ratio approaching 10 and on-off ratio up to 10. Furthermore, we design and fabricate tunable multivalue inverters, in which the output logic state and window of the mid-logic can be controlled by specific pairs of channel length and, most importantly, by the electric field, which shifts the band-structure alignment across the heterojunction. Finally, high gains over 150 are achieved in the inverters with optimized device geometries, showing great potential for future logic applications.
由于一系列新型二维材料能够形成具有独特电子特性的范德华异质结构，因此它们已被积极探索用于超越摩尔定律和超越摩尔技术的器件应用。然而，大多数已报道的电子器件在多功能操作方面的控制能力不足。在此，我们利用窄带隙黑磷和宽带隙二硫化钼的能带结构对齐特性，实现了垂直异质结构，其具有接近10的超高整流比和高达10的开/关比。此外，我们设计并制造了可调多值逆变器，其中输出逻辑状态和中间逻辑窗口可以通过特定的沟道长度对来控制，最重要的是，可以通过电场来控制，电场会改变异质结上的能带结构对齐。最后，通过优化器件几何结构，逆变器实现了超过150的高增益，显示出在未来逻辑应用中的巨大潜力。
