Su Bao-Wang, Zhang Xi-Lin, Yao Bin-Wei, Guo Hao-Wei, Li De-Kang, Chen Xu-Dong, Liu Zhi-Bo, Tian Jian-Guo
The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300071, China.
Small. 2020 Dec;16(50):e2003593. doi: 10.1002/smll.202003593. Epub 2020 Nov 23.
Achieving multifunctional van der Waals nanoelectronic devices on one structure is essential for the integration of 2D materials; however, it involves complex architectural designs and manufacturing processes. Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing to fabricate diode, NPN (PNP) bipolar junction transistor (BJT) simultaneously based on a pre-fabricated black phosphorus/molybdenum disulfide heterostructure is demonstrated. The PN junctions exhibit good diode rectification behavior. Due to different carrier concentrations of BP and MoS , the NPN BJT, with a narrower base width, renders better performance than the PNP BJT. Furthermore, the current gain can be modulated efficiently through laser writing tunable base width W , which is consistent with the theoretical results. The maximum gain for NPN and PNP is found to be ≈41 (@W ≈600 nm) and ≈12 (@W ≈600 nm), respectively. In addition, this laser write processing technique also can be utilized to realize multifunctional WSe /MoS heterostructure device. The current work demonstrates a novel, cost-effective, and universal method to fabricate multifunctional nanoelectronic devices. The proposed approach exhibits promise for large-scale integrated circuits based on 2D heterostructures.
在一个结构上实现多功能范德华纳米电子器件对于二维材料的集成至关重要；然而，这涉及复杂的架构设计和制造工艺。在此，展示了一种基于预制黑磷/二硫化钼异质结构，通过简便、快速且通用的激光直写微纳加工同时制造二极管、NPN（PNP）双极结型晶体管（BJT）的方法。PN结表现出良好的二极管整流行为。由于BP和MoS的载流子浓度不同，基区宽度更窄的NPN BJT比PNP BJT具有更好的性能。此外，电流增益可以通过激光写入可调基区宽度W进行有效调制，这与理论结果一致。发现NPN和PNP的最大增益分别约为41（@W≈600 nm）和12（@W≈600 nm）。此外，这种激光写入加工技术还可用于实现多功能WSe/MoS异质结构器件。当前工作展示了一种制造多功能纳米电子器件的新颖、经济高效且通用的方法。所提出的方法对基于二维异质结构的大规模集成电路具有应用前景。
