氢气传感用SnO薄膜的退火效应

Annealing Effects on SnO Thin Film for H Gas Sensing.

作者信息

Yang Yijun, Maeng Bohee, Jung Dong Geon, Lee Junyeop, Kim Yeongsam, Kwon JinBeom, An Hee Kyung, Jung Daewoong

机构信息

Advanced Mechatronics R&D Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, Korea.

School of Electronic and Electrical Engineering, College of IT Engineering, Kyungpook National University, 80 Daehakro, Daegu 41566, Korea.

出版信息

Nanomaterials (Basel). 2022 Sep 16;12(18):3227. doi: 10.3390/nano12183227.

DOI:10.3390/nano12183227

PMID:36145014

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9501209/

Abstract

Hydrogen (H) is attracting attention as a renewable energy source in various fields. However, H has a potential danger that it can easily cause a backfire or explosion owing to minor external factors. Therefore, H gas monitoring is significant, particularly near the lower explosive limit. Herein, tin dioxide (SnO) thin films were annealed at different times. The as-obtained thin films were used as sensing materials for H gas. Here, the performance of the SnO thin film sensor was studied to understand the effect of annealing and operating temperature conditions of gas sensors to further improve their performance. The gas sensing properties exhibited by the 3-h annealed SnO thin film showed the highest response compared to the unannealed SnO thin film by approximately 1.5 times. The as-deposited SnO thin film showed a high response and fast response time to 5% H gas at 300 °C of 257.34% and 3 s, respectively.

摘要

氢（H）作为一种可再生能源在各个领域正受到关注。然而，氢气存在潜在危险，由于微小的外部因素，它很容易引发回火或爆炸。因此，氢气监测非常重要，特别是在接近爆炸下限的情况下。在此，二氧化锡（SnO）薄膜在不同时间进行了退火处理。所获得的薄膜用作氢气传感材料。在此，研究了SnO薄膜传感器的性能，以了解气体传感器的退火和工作温度条件的影响，从而进一步提高其性能。与未退火的SnO薄膜相比，经过3小时退火的SnO薄膜所表现出的气敏特性显示出最高的响应，约为其1.5倍。沉积态的SnO薄膜在300℃下对5%氢气显示出高响应和快速响应时间，分别为257.34%和3秒。