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纳米级类FeGe器件结构中斯格明子的限制

Confinement of Skyrmions in Nanoscale FeGe Device-like Structures.

作者信息

Twitchett-Harrison Alison C, Loudon James C, Pepper Ryan A, Birch Max T, Fangohr Hans, Midgley Paul A, Balakrishnan Geetha, Hatton Peter D

机构信息

Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.

Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, United Kingdom.

出版信息

ACS Appl Electron Mater. 2022 Sep 27;4(9):4427-4437. doi: 10.1021/acsaelm.2c00692. Epub 2022 Sep 7.

Abstract

Skyrmion-based devices have been proposed as a promising solution for low-energy data storage. These devices include racetrack or logic structures and require skyrmions to be confined in regions with dimensions comparable to the size of a single skyrmion. Here we examine skyrmions in FeGe device shapes using Lorentz transmission electron microscopy to reveal the consequences of skyrmion confinement in a device-like structure. Dumbbell-shaped elements were created by focused ion beam milling to provide regions where single skyrmions are confined adjacent to areas containing a skyrmion lattice. Simple block shapes of equivalent dimensions were also prepared to allow a direct comparison with skyrmion formation in a less complex, yet still confined, device geometry. The impact of applying a magnetic field and varying the temperature on the formation of skyrmions within the shapes was examined. This revealed that it is not just confinement within a small device structure that controls the position and number of skyrmions but that a complex device geometry changes the skyrmion behavior, including allowing skyrmions to form at lower applied magnetic fields than in simple shapes. The impact of edges in complex shapes is observed to be significant in changing the behavior of the magnetic textures formed. This could allow methods to be developed to control both the position and number of skyrmions within device structures.

摘要

基于斯格明子的器件已被视为低能耗数据存储的一种很有前景的解决方案。这些器件包括赛道或逻辑结构,并且要求斯格明子被限制在尺寸与单个斯格明子大小相当的区域内。在这里,我们使用洛伦兹透射电子显微镜研究了铁锗器件形状中的斯格明子,以揭示在类似器件的结构中斯格明子受限的后果。通过聚焦离子束铣削制造出哑铃形元件,以提供单个斯格明子被限制在与包含斯格明子晶格的区域相邻的区域。还制备了等效尺寸的简单块状形状,以便与在较不复杂但仍受限的器件几何形状中的斯格明子形成进行直接比较。研究了施加磁场和改变温度对这些形状内斯格明子形成的影响。这表明,控制斯格明子位置和数量的不仅仅是在小器件结构内的限制,而且复杂的器件几何形状会改变斯格明子行为,包括允许斯格明子在比简单形状更低的外加磁场下形成。观察到复杂形状中的边缘在改变形成的磁织构行为方面具有显著影响。这可以开发出控制器件结构内斯格明子位置和数量的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/84ce/9520970/987a8ee8ed10/el2c00692_0001.jpg

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