Ren Weibin, Yang Minzheng, Zhou Le, Fan Youjun, He Shan, Pan Jiayu, Tang Tongxiang, Xiao Yao, Nan Ce-Wen, Shen Yang
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, P. R. China.
Adv Mater. 2022 Nov;34(47):e2207421. doi: 10.1002/adma.202207421. Epub 2022 Oct 25.
The miniaturization of electronic devices and power systems for capacitive energy storage under harsh environments requires scalable high-quality ultrathin high-temperature dielectric films. To meet the need, ultrasonic spray-coating (USC) can be used. Novel polyimides with a dipolar group, CF (F-PI), and all-organic composites with trace organic semiconductor can serve as models. These scalable high-quality ultrathin films (≈2.6 and ≈5.2 µm) are successfully fabricated via USC. The high quality of the films is evaluated from the micro-millimeter scale to the sub-millimeter and above. The high glass transition temperature T (≈340 °C) and concurrent large bandgap E (≈3.53 eV) induced by weak conjugation from considerable interchain distance (≈6.2 Å) enable F-PI to be an excellent matrix delivering a discharge energy density with 90% discharge efficiency U of 2.85 J cm at 200 °C. Further, the incorporation of a trace organic semiconductor leads to a record U of ≈4.39 J cm at 200 °C due to the markedly enhanced breakdown strength caused by deep charge traps of ≈2 eV. Also, a USC-fabricated multilayer F-PI foil capacitor with ≈85 nF (six layers) has good performance at 150 °C. These results confirm that USC is an excellent technology to fabricate high-quality ultrathin dielectric films and capacitors.
在恶劣环境下用于电容式储能的电子设备和电力系统的小型化需要可扩展的高质量超薄高温介电薄膜。为满足这一需求,可采用超声喷涂(USC)技术。具有偶极基团CF的新型聚酰亚胺(F-PI)以及含有微量有机半导体的全有机复合材料可作为模型。通过超声喷涂成功制备了这些可扩展的高质量超薄薄膜(约2.6和约5.2 µm)。从微米到亚毫米及以上尺度对薄膜的高质量进行了评估。由相当大的链间距离(约6.2 Å)引起的弱共轭导致的高玻璃化转变温度T(约340 °C)和同时出现的大带隙E(约3.53 eV),使得F-PI成为一种优异的基体,在200 °C时能够提供放电能量密度为2.85 J cm且放电效率U为90%的性能。此外,由于约2 eV的深电荷陷阱导致击穿强度显著提高,掺入微量有机半导体后在200 °C时的U达到约4.39 J cm的创纪录值。而且,通过超声喷涂制备的具有约85 nF(六层)的多层F-PI箔式电容器在150 °C时具有良好的性能。这些结果证实超声喷涂是制备高质量超薄介电薄膜和电容器的优异技术。