Youn Sarah Su-O, Kim Jihyun, Na Junhong, Jo William, Kim Gee Yeong
Department of Physics, Ewha Womans University, Seoul03760, Republic of Korea.
Advanced Photovoltaics Research Center, Korea Institute of Science and Technology, Seoul02792, Republic of Korea.
ACS Appl Mater Interfaces. 2022 Oct 26;14(42):48229-48239. doi: 10.1021/acsami.2c12461. Epub 2022 Oct 12.
Tin oxide (SnO) has been widely used as an n-type metal oxide electron transport layer in perovskite solar cells (PSCs) owing to its superior electrical and optical properties and low-temperature synthesis process. In particular, the interfacial effect between indium tin oxide (ITO) and SnO is an important parameter that controls the charge transport properties and device performance of the PSCs. Therefore, understanding the interfacial effect of ITO/SnO and its role in PSCs is crucial, but it is not studied intensively. Herein, we investigated the space-charge effect at the interface of ITO/SnO using transfer length measurement and conductive atomic force microscopy as a function of SnO thickness. Moreover, optical, morphologic, and device measurements were performed to determine the optimal SnO thickness for PSCs. The space-charge effect was identified in ITO/SnO when the SnO layer was very thin due to electron depletion near the interface. Interestingly, a critical kink point was observed at approximately 10 nm SnO thickness, indicating the electron depletion and weak charge transfer behavior of the device. Thus, a thickness around 20 nm was favorable for the best PSC performance because charge transport behavior in the thin SnO layer was depressed by electron depletion. However, when the thickness of SnO exceeded 50 nm, the device performance deteriorated due to increased series resistance. This study provides a strategy to tune the electron transport layer and boost the charge transport behavior in PSCs, making important contributions to optimizing SnO-based PSCs.
氧化锡(SnO)因其优异的电学和光学性能以及低温合成工艺,已被广泛用作钙钛矿太阳能电池(PSC)中的n型金属氧化物电子传输层。特别是,氧化铟锡(ITO)与SnO之间的界面效应是控制PSC电荷传输特性和器件性能的重要参数。因此,了解ITO/SnO的界面效应及其在PSC中的作用至关重要,但尚未得到深入研究。在此,我们使用转移长度测量和导电原子力显微镜研究了ITO/SnO界面处的空间电荷效应与SnO厚度的关系。此外,还进行了光学、形态学和器件测量,以确定PSC的最佳SnO厚度。当SnO层非常薄时,由于界面附近的电子耗尽,在ITO/SnO中发现了空间电荷效应。有趣的是,在SnO厚度约为10 nm时观察到一个临界拐点,表明器件存在电子耗尽和电荷转移行为较弱的情况。因此,约20 nm的厚度有利于实现最佳的PSC性能,因为薄SnO层中的电荷传输行为因电子耗尽而受到抑制。然而,当SnO的厚度超过50 nm时,器件性能因串联电阻增加而恶化。本研究提供了一种调节电子传输层并促进PSC中电荷传输行为的策略,为优化基于SnO的PSC做出了重要贡献。