Kim Jihyun, Jo William
New and Renewable Energy Research Center, Ewha Womans University, Seoul, 03760, Korea.
Department of Physics, Ewha Womans University, Seoul, 03760, Korea.
Nano Converg. 2024 Dec 16;11(1):57. doi: 10.1186/s40580-024-00464-z.
Perovskite solar cells (PSCs) have garnered significant attention for their high power conversion efficiency (PCE) and potential for cost-effective, large-scale manufacturing. This comprehensive review focuses on the role of buried interface engineering in enhancing the performance and stability of PSCs with both n-type electron transport layer/perovskite/p-type hole transport layer (n-i-p) and p-type hole transport layer/perovskite/n-type electron transport layer (p-i-n) structures. This study highlights key challenges associated with interface engineering, such as charge extraction, recombination loss, and energy level alignment. Various interface engineering techniques, such as surface passivation, self-assembled monolayers, and additive engineering, are explored in terms of their effectiveness in mitigating recombination loss and improving long-term device stability. This review also provides an in-depth analysis of material selection for the electron and hole transport layers, defect management techniques, and the influence of these on perovskite film quality and device stability. Advanced characterization methods for buried interfaces are discussed, providing insights into the structural, morphological, and electronic properties that govern device performance. Furthermore, we explore emerging approaches that target homogenous cation distribution and phase stability at buried interfaces, both of which are crucial for improving PCEs beyond current benchmarks. By synthesizing the latest research findings and identifying key challenges, this review aims to guide future directions in interface engineering for PSCs and ensure their successful use in next-generation sustainable energy technologies.
钙钛矿太阳能电池（PSCs）因其高功率转换效率（PCE）以及具有经济高效的大规模制造潜力而备受关注。这篇综述全面聚焦于掩埋界面工程在提高具有n型电子传输层/钙钛矿/p型空穴传输层（n-i-p）和p型空穴传输层/钙钛矿/n型电子传输层（p-i-n）结构的PSCs的性能和稳定性方面所起的作用。本研究突出了与界面工程相关的关键挑战，如电荷提取、复合损失和能级对齐。探讨了各种界面工程技术，如表面钝化、自组装单分子层和添加剂工程，分析了它们在减轻复合损失和提高器件长期稳定性方面的有效性。本综述还深入分析了电子和空穴传输层的材料选择、缺陷管理技术以及这些因素对钙钛矿薄膜质量和器件稳定性的影响。讨论了用于掩埋界面的先进表征方法，深入了解了决定器件性能的结构、形态和电子特性。此外，我们探索了针对掩埋界面处均匀阳离子分布和相稳定性的新兴方法，这两者对于提高PCE超越当前基准至关重要。通过综合最新研究成果并识别关键挑战，本综述旨在为PSCs的界面工程指明未来方向，并确保其在下一代可持续能源技术中的成功应用。
