偏置石墨烯中热发射位置的调控

Regulation of Thermal Emission Position in Biased Graphene.

作者信息

Fan Yansong, Zhang Zhengzhuo, Zhu Zhihong, Zhang Jianfa, Xu Wei, Wu Fan, Yuan Xiaodong, Guo Chucai, Qin Shiqiao

机构信息

College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.

出版信息

Nanomaterials (Basel). 2022 Oct 3;12(19):3457. doi: 10.3390/nano12193457.

DOI:10.3390/nano12193457

PMID:36234585

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9565320/

Abstract

A very attractive advantage of graphene is that its Fermi level can be regulated by electrostatic bias doping. It is of great significance to investigate and control the spatial location of graphene emission for graphene thermal emitters, in addition to tuning the emission intensity and emission spectrum. Here, we present a detailed theoretical model to describe the graphene emission characteristics versus gate voltages. The experimentally observed movement of the emission spot and temperature distribution of graphene emitters are basically in agreement with those from the theoretical model. Our results provide a simple method to predict the behavior of graphene emitters that is beneficial for achieving the spatial dynamic regulation of graphene infrared emission arrays.

摘要

石墨烯一个非常吸引人的优点是其费米能级可以通过静电偏置掺杂来调节。除了调节发射强度和发射光谱外，研究和控制石墨烯热发射体中石墨烯发射的空间位置也具有重要意义。在此，我们提出了一个详细的理论模型来描述石墨烯发射特性与栅极电压的关系。实验观察到的石墨烯发射体发射光斑的移动和温度分布与理论模型的结果基本一致。我们的结果提供了一种预测石墨烯发射体行为的简单方法，这有利于实现石墨烯红外发射阵列的空间动态调控。