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存在正交磁场时具有通用势的石墨烯器件的输运模拟

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field.

作者信息

Marconcini Paolo, Macucci Massimo

机构信息

Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy.

出版信息

Nanomaterials (Basel). 2022 Mar 26;12(7):1087. doi: 10.3390/nano12071087.

Abstract

The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise. Then, the extended code is successfully validated, simulating several interesting magnetic-related phenomena in graphene devices, including magnetic-field-induced energy-gap modulation, coherent electron focusing, and Aharonov-Bohm interference effects.

摘要

基于狄拉克方程在倒易空间中的解,将正交磁场的效应引入到一个数值模拟器中,用于研究由具有一般势的扶手椅形带组成的石墨烯器件中的输运。为实现这一目标提出了不同的方法。比较了它们的效率和适用范围,特别关注模型设置方面的要求以及可能出现的数值问题。然后,通过模拟石墨烯器件中几种有趣的与磁相关的现象,包括磁场诱导的能隙调制、相干电子聚焦和阿哈罗诺夫 - 玻姆干涉效应,成功验证了扩展后的代码。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ce8/9000618/7ade90e3c01d/nanomaterials-12-01087-g001.jpg

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