Wang Zhiling, Bao Zenghui, Li Yan, Wu Yukai, Cai Weizhou, Wang Weiting, Han Xiyue, Wang Jiahui, Song Yipu, Sun Luyan, Zhang Hongyi, Duan Luming
Center for Quantum Information, Institute for Interdisciplinary Information Sciences, Tsinghua University, 100084, Beijing, PR China.
Hefei National Laboratory, 230088, Hefei, PR China.
Nat Commun. 2022 Oct 15;13(1):6104. doi: 10.1038/s41467-022-33921-6.
A photonic transistor that can switch or amplify an optical signal with a single gate photon requires strong non-linear interaction at the single-photon level. Circuit quantum electrodynamics provides great flexibility to generate such an interaction, and thus could serve as an effective platform to realize a high-performance single-photon transistor. Here we demonstrate such a photonic transistor in the microwave regime. Our device consists of two microwave cavities dispersively coupled to a superconducting qubit. A single gate photon imprints a phase shift on the qubit state through one cavity, and further shifts the resonance frequency of the other cavity. In this way, we realize a gain of the transistor up to 53.4 dB, with an extinction ratio better than 20 dB. Our device outperforms previous devices in the optical regime by several orders in terms of optical gain, which indicates a great potential for application in the field of microwave quantum photonics and quantum information processing.
一种能够利用单个栅极光子来切换或放大光信号的光子晶体管，需要在单光子水平上具备强大的非线性相互作用。电路量子电动力学为产生这种相互作用提供了极大的灵活性，因此可以作为实现高性能单光子晶体管的有效平台。在此，我们展示了一种处于微波波段的此类光子晶体管。我们的器件由两个与一个超导量子比特色散耦合的微波腔组成。单个栅极光子通过一个腔在量子比特态上 imprint 一个相移，并进一步改变另一个腔的共振频率。通过这种方式，我们实现了该晶体管高达 53.4 dB 的增益，消光比优于 20 dB。我们的器件在光学增益方面比之前光学波段的器件性能高出几个数量级，这表明其在微波量子光子学和量子信息处理领域具有巨大的应用潜力。 （注：“imprint”此处可能结合语境意译为“施加”之类更合适，但按要求未加解释说明，保留原文）
