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在有机碳饥饿条件下脱硫弧菌生物膜对钛的微生物影响腐蚀。

Microbiologically influenced corrosion of titanium by Desulfovibrio vulgaris biofilm under organic carbon starvation.

机构信息

Department of Chemical and Biomolecular Engineering, Institute for Corrosion and Multiphase Technology, Ohio University, Athens OH 45701, USA; Institute of Marine Sciences and Management, Istanbul University, Istanbul 34134, Turkey.

Department of Chemical and Biomolecular Engineering, Institute for Corrosion and Multiphase Technology, Ohio University, Athens OH 45701, USA.

出版信息

Bioelectrochemistry. 2023 Feb;149:108307. doi: 10.1016/j.bioelechem.2022.108307. Epub 2022 Oct 17.

Abstract

Desulfovibrio vulgaris biofilm was pre-grown on Ti coupons for 7 d and then the biofilm covered coupons were incubated again with fresh culture media with 10 % (reduced) and 100 % (normal) carbon source levels, respectively. After the pre-growth, sessile D. vulgaris cell count reached 10 cells/cm. The sessile cell counts were 2 × 10 and 4.2 × 10 cells/cm for 10 % and 100 % carbon sources, respectively after the subsequent 7 d starvation test. The maximum pit depth after the 7 d pre-growth was 4.7 µm. After the additional 7 d of the starvation test, the maximum pit depth increased to 5.1 µm for 100 % carbon source vs 6.2 µm for 10 % carbon source. Corrosion current density (i) from potentiodynamic polarization data at the end of the 7 d starvation test for 10 % carbon source was more than 3 times of that for 100 % carbon source, despite a reduced sessile cell count with 10 % carbon source. The polarization resistance (R) started to decrease within minutes after 20 ppm (w/w) riboflavin (electron mediator) injection. The carbon starvation data and riboflavin corrosion acceleration data both suggested that D. vulgaris utilized elemental Ti as an electron source to replace carbon source as the electron donor during carbon source starvation.

摘要

脱硫弧菌生物膜在 Ti 试片上预先生长了 7 天,然后用新鲜的培养基再次孵育生物膜覆盖的试片,培养基中碳源水平分别为 10%(还原)和 100%(正常)。预生长后,固定不动的 D. vulgaris 细胞计数达到 10 个细胞/cm。在随后的 7 天饥饿测试后,10%和 100%碳源的固定不动细胞计数分别为 2×10 和 4.2×10 个细胞/cm。经过 7 天的预生长,最大的蚀坑深度为 4.7 µm。在随后的 7 天饥饿测试结束后,最大蚀坑深度增加到 5.1 µm,而 100%碳源的最大蚀坑深度为 6.2 µm。尽管 10%碳源的固定不动细胞计数减少,但在 7 天饥饿测试结束时,从动电位极化数据得出的腐蚀电流密度(i)是 100%碳源的 3 倍以上。在 20 ppm(w/w)核黄素(电子介体)注入后几分钟内,极化电阻(R)开始下降。碳饥饿数据和核黄素腐蚀加速数据均表明,在碳源饥饿期间,脱硫弧菌利用元素钛作为电子源,代替碳源作为电子供体。

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