State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China.
School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, Anhui, 230026, China.
Adv Sci (Weinh). 2022 Dec;9(35):e2204687. doi: 10.1002/advs.202204687. Epub 2022 Oct 26.
Two-dimensional (2D) materials have emerged as prospective candidates for electronics and optoelectronics applications as they can be easily fabricated through liquid exfoliation and used to fabricate various structures by further subsequent processing methods in addition to their extraordinary and unique optoelectronic properties. Herein, the Ti C T /ZIS heterostructure with nanometer-thick Ti C T -MXene and ZnIn S (ZIS) films is fabricated by successive interfacial assembly of liquid exfoliated 2D MXene and ZnIn S nanoflakes. Benefiting from the superior light-harvesting capability and low dark current of ZnIn S , the limited absorbance, large scattering coefficient, and high dark current disadvantages of MXene are ameliorated. Meanwhile, the separation and transport of photogenerated carriers in ZnIn S are improved due to the excellent electrical conductivity of Ti C T nanoflakes. As a result, the as-prepared Ti C T /ZIS heterostructure photodetector has excellent optoelectronic characteristics in terms of a high responsivity of 1.04 mA W , a large specific detectivity up to 1 × 10 Jones, a huge on/off ratio at around 10 , and an ultralow dark current at ≈10 A. This work demonstrates a convenient method to construct heterostructured photodetectors by liquid exfoliated 2D nanoflakes, the as-fabricated Ti C T /ZIS heterostructured photodetectors show promising application potential for low-cost, reliable, and high-performance photodetectors.
二维（2D）材料作为电子和光电子应用的有前途的候选材料，因为它们可以通过液相剥离轻易地制备，并可以通过进一步的后续加工方法来制造各种结构，此外，它们还具有非凡且独特的光电性能。在此，通过液相剥离二维 MXene 和 ZnInS（ZIS）纳米片的连续界面组装，制备出具有纳米厚 TiCT-MXene 和 ZIS 薄膜的 TiCT/ZIS 异质结。得益于 ZnInS 的优越的光捕获能力和低暗电流，改善了 MXene 的有限吸收率、大散射系数和高暗电流缺点。同时，由于 TiCT 纳米片的优异导电性，改善了 ZnInS 中光生载流子的分离和输运。因此，所制备的 TiCT/ZIS 异质结光电探测器在光电特性方面表现出优异的性能，响应度高达 1.04 mA W ，比探测率高达 1×10 琼斯，开关比高达 10 ，暗电流低至约 10 。这项工作展示了一种通过液相剥离二维纳米片构建异质结构光电探测器的简便方法，所制造的 TiCT/ZIS 异质结构光电探测器在低成本、可靠和高性能光电探测器方面显示出了有前景的应用潜力。
