用于高效超纯绿色有机发光二极管的金（I）多共振热激活延迟荧光发射体
Gold(I) Multi-Resonance Thermally Activated Delayed Fluorescent Emitters for Highly Efficient Ultrapure-Green Organic Light-Emitting Diodes.
作者信息
Cai Siyuan, Tong Glenna So Ming, Du Lili, So Gary Kwok-Ming, Hung Faan-Fung, Lam Tsz-Lung, Cheng Gang, Xiao Hui, Chang Xiaoyong, Xu Zong-Xiang, Che Chi-Ming
机构信息
Department of Chemistry, State Key Laboratory of Synthetic Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China.
Department of Chemistry, Southern University of Science and Technology of China, Shenzhen, Guangdong, 518055, P. R. China.
出版信息
Angew Chem Int Ed Engl. 2022 Dec 23;61(52):e202213392. doi: 10.1002/anie.202213392. Epub 2022 Nov 24.
Acceleration of singlet-triplet intersystem crossings (ISC) is instrumental in bolstering triplet exciton harvesting of multi-resonance thermally activated delayed fluorescent (MR-TADF) emitters. This work describes a simple gold(I) coordination strategy to enhance the spin-orbit coupling of green and blue BN(O)-based MR-TADF emitters, which results in a notable increase in rate constants of the spectroscopically observed ISC process to 3×10 s with nearly unitary ISC quantum yields. Accordingly, the resultant thermally-stable Au emitters attained large values of delayed fluorescence radiative rate constant up to 1.3×10 /1.7×10 s in THF/PMMA film while preserving narrowband emissions (FWHM=30-37 nm) and high emission quantum yields (ca. 0.9). The vapor-deposited ultrapure-green OLEDs fabricated with these Au emitters delivered high luminance of up to 2.53×10 cd m as well as external quantum efficiencies of up to 30.3 % with roll-offs as low as 0.8 % and long device lifetimes (LT ) of 1210 h at 1000 cd m .
单重态-三重态系间窜越（ISC）的加速对于增强多共振热激活延迟荧光（MR-TADF）发光体的三重态激子收集至关重要。这项工作描述了一种简单的金（I）配位策略，以增强绿色和蓝色基于BN（O）的MR-TADF发光体的自旋-轨道耦合，这导致光谱观测到的ISC过程的速率常数显著增加至3×10⁵ s⁻¹，ISC量子产率接近单位值。因此，所得的热稳定金发光体在THF/PMMA薄膜中获得了高达1.3×10⁶/1.7×10⁶ s⁻¹的延迟荧光辐射速率常数的大值，同时保持窄带发射（半高宽 = 30 - 37 nm）和高发射量子产率（约0.9）。用这些金发光体制备的蒸镀超纯绿色OLED具有高达2.53×10⁴ cd m⁻²的高亮度以及高达30.3%的外量子效率，滚降低至0.8%，在1000 cd m⁻²下的器件寿命（LT₅₀）长达1210小时。
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