Zhou Zhiying, Zhao Fengzhou, Wang Cheng, Li Xiaoxuan, He Shunli, Tian Dan, Zhang Dengying, Zhang Lichun
Opt Express. 2022 Aug 1;30(16):29749-29759. doi: 10.1364/OE.464563.
With vacuum thermal evaporation, the CuI film was deposited on quartz and n-GaN substrates, and the morphology, crystalline structure and optical properties of the CuI films were investigated. According to the XRD results, the CuI film preferentially grew along [111] crystal orientation on the GaN epilayer. With Au and Ni/Au ohmic contact electrodes fabricated on CuI and n-GaN, a prototype p-CuI/n-GaN heterojunction UV photodetector strong UV spectral selectivity was created. At 0 V and 360 nm front illumination (0.32 mW/cm), the heterojunction photodetector displayed outstanding self-powered detection performance with the responsivity (R), specific detectivity (D*), and on/off ratio up to 75.5 mA/W, 1.27×10 Jones, and ∼2320, respectively. Meanwhile, the p-CuI/n-GaN heterojunction photodetector had excellent atmosphere stability.
通过真空热蒸发法，将碘化亚铜（CuI）薄膜沉积在石英和n型氮化镓（n-GaN）衬底上，并对CuI薄膜的形貌、晶体结构和光学性质进行了研究。根据X射线衍射（XRD）结果，CuI薄膜在GaN外延层上优先沿[111]晶体取向生长。在CuI和n-GaN上制备了金（Au）和镍/金（Ni/Au）欧姆接触电极，制造出了具有强紫外光谱选择性的p-CuI/n-GaN异质结紫外光电探测器原型。在0 V和360 nm正面光照（0.32 mW/cm）条件下，该异质结光电探测器展现出优异的自供电探测性能，其响应度（R）、比探测率（D*）和开/关比分别高达75.5 mA/W、1.27×10琼斯和约2320。同时，p-CuI/n-GaN异质结光电探测器具有出色的大气稳定性。
