Kremer Geoffroy, Maklar Julian, Nicolaï Laurent, Nicholson Christopher W, Yue Changming, Silva Caio, Werner Philipp, Dil J Hugo, Krempaský Juraj, Springholz Gunther, Ernstorfer Ralph, Minár Jan, Rettig Laurenz, Monney Claude
Département de Physique and Fribourg Center for Nanomaterials, Université de Fribourg, CH-1700, Fribourg, Switzerland.
Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
Nat Commun. 2022 Oct 27;13(1):6396. doi: 10.1038/s41467-022-33978-3.
Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, α-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to giant Rashba coupling. Its room temperature ferroelectricity was recently demonstrated as a route towards a new type of highly energy-efficient non-volatile memory device based on switchable polarization. Currently based on the application of an electric field, the writing and reading processes could be outperformed by the use of femtosecond light pulses requiring exploration of the possible control of ferroelectricity on this timescale. Here, we probe the room temperature transient dynamics of the electronic band structure of α-GeTe(111) using time and angle-resolved photoemission spectroscopy. Our experiments reveal an ultrafast modulation of the Rashba coupling mediated on the fs timescale by a surface photovoltage, namely an increase corresponding to a 13% enhancement of the lattice distortion. This opens the route for the control of the ferroelectric polarization in α-GeTe(111) and ferroelectric semiconducting materials in quantum heterostructures.
Rashba材料已成为原型自旋电子器件中自旋到电荷转换的理想平台。其中,α-GeTe(111)是一种非中心对称铁电半导体,其强自旋轨道相互作用会产生巨大的Rashba耦合。最近,其室温铁电性被证明是通往基于可切换极化的新型高能效非易失性存储器件的途径。目前基于电场的应用,通过使用飞秒光脉冲来进行写入和读取过程可能会表现得更好,这需要探索在此时间尺度上对铁电性的可能控制。在此,我们使用时间和角分辨光电子能谱探测α-GeTe(111)电子能带结构的室温瞬态动力学。我们的实验揭示了在飞秒时间尺度上由表面光电压介导的Rashba耦合的超快调制,即对应于晶格畸变增强13%的增加。这为控制α-GeTe(111)中的铁电极化以及量子异质结构中的铁电半导体材料开辟了道路。