揭示具有无电形成和复位电压控制多电平电阻特性的钙铁氧体钙钛矿体系中的电阻开关机制。
Revealing Resistive Switching Mechanism in CaFeO Perovskite System with Electroforming-Free and Reset Voltage-Controlled Multilevel Resistance Characteristics.
作者信息
Lo Hung-Yang, Huang Chun-Wei, Chiu Chun-Chien, Chen Jui-Yuan, Shen Fang-Chun, Wang Che-Hung, Chen Yen-Jung, Wang Chien-Hua, Yang Jan-Chi, Wu Wen-Wei
机构信息
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No.1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan (R.O.C.).
Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Rd., Seatwen Dist., Taichung City, 407802, Taiwan (R.O.C.).
出版信息
Small. 2022 Dec;18(51):e2205306. doi: 10.1002/smll.202205306. Epub 2022 Nov 3.
Recently, perovskite (PV) oxides with ABO structures have attracted considerable interest from scientists owing to their functionality. In this study, CaFeO is introduced to reveal the resistive switching properties and mechanism of oxygen vacancy transition in PV and brownmillerite (BM) structures. BM-CaFeO is grown on an Nb-STO conductive substrate epitaxially. CaFeO exhibits excellent endurance and reliability. In addition, the CaFeO also demonstrates an electroforming-free characteristic and multilevel resistance properties. To construct the switching mechanism, high-resolution transmission electron microscopy is used to observe the topotactic phase change in CaFeO . In addition, scanning TEM and electron energy loss spectroscopy show the structural evolution and valence state variation of CaFeO after the switching behavior. This study not only reveals the switching mechanism of CaFeO , but also provides a PV oxide option for the dielectric material in resistive random-access memory (RRAM) devices.
最近，具有ABO结构的钙钛矿（PV）氧化物因其功能性而引起了科学家们的广泛关注。在本研究中，引入CaFeO以揭示PV和褐锰矿（BM）结构中的电阻开关特性以及氧空位转变机制。BM-CaFeO外延生长在Nb-STO导电衬底上。CaFeO表现出优异的耐久性和可靠性。此外，CaFeO还具有无电形成特性和多级电阻特性。为了构建开关机制，使用高分辨率透射电子显微镜观察CaFeO中的拓扑相变。此外，扫描透射电子显微镜和电子能量损失谱显示了开关行为后CaFeO的结构演变和价态变化。本研究不仅揭示了CaFeO的开关机制，还为电阻式随机存取存储器（RRAM）器件中的介电材料提供了一种PV氧化物选择。
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