重置电压控制电阻状态及无形成铁掺杂钛酸锶薄膜忆阻器的应用

Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO Thin-Film Memristor.

作者信息

Lee Ke-Jing, Wu Cheng-Hua, Lee Cheng-Jung, Chou Dei-Wei, Wang Na-Fu, Wang Yeong-Her

机构信息

Center for Environmental Toxin and Emerging-Contaminant Research & Technology Center, Department of Electronic Engineering, Cheng Shiu University, Kaohsiung City 83347, Taiwan.

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701401, Taiwan.

出版信息

Materials (Basel). 2024 Oct 14;17(20):5021. doi: 10.3390/ma17205021.

DOI:10.3390/ma17205021

PMID:39459726

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11509406/

Abstract

In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 10, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.

摘要

在本研究中，我们采用溶胶 - 凝胶工艺制备了钛酸锶铁（STF）薄膜，用于电阻式随机存取存储器（RRAM）应用的绝缘。与典型的钛酸锶（STO）RRAM相比，STF RRAM中电阻开关特性的改善是明显的。Al/STO/ITO/玻璃RRAM的设置/重置电压为 -1.4 V / +3.3 V，而Al/STF/ITO/玻璃RRAM的设置/重置电压为 -0.45 V / +1.55 V，呈现出大于10的记忆窗口、低工作电压以及超过104秒的器件稳定性。在本研究中，研究了铁对Al/STF/ITO/玻璃RRAM器件导电路径和双极电阻开关特性的影响。