• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

重置电压控制电阻状态及无形成铁掺杂钛酸锶薄膜忆阻器的应用

Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO Thin-Film Memristor.

作者信息

Lee Ke-Jing, Wu Cheng-Hua, Lee Cheng-Jung, Chou Dei-Wei, Wang Na-Fu, Wang Yeong-Her

机构信息

Center for Environmental Toxin and Emerging-Contaminant Research & Technology Center, Department of Electronic Engineering, Cheng Shiu University, Kaohsiung City 83347, Taiwan.

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701401, Taiwan.

出版信息

Materials (Basel). 2024 Oct 14;17(20):5021. doi: 10.3390/ma17205021.

DOI:10.3390/ma17205021
PMID:39459726
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11509406/
Abstract

In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 10, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.

摘要

在本研究中，我们采用溶胶 - 凝胶工艺制备了钛酸锶铁（STF）薄膜，用于电阻式随机存取存储器（RRAM）应用的绝缘。与典型的钛酸锶（STO）RRAM相比，STF RRAM中电阻开关特性的改善是明显的。Al/STO/ITO/玻璃RRAM的设置/重置电压为 -1.4 V / +3.3 V，而Al/STF/ITO/玻璃RRAM的设置/重置电压为 -0.45 V / +1.55 V，呈现出大于10的记忆窗口、低工作电压以及超过104秒的器件稳定性。在本研究中，研究了铁对Al/STF/ITO/玻璃RRAM器件导电路径和双极电阻开关特性的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/595682f5ec78/materials-17-05021-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/a32e3ab4bb1e/materials-17-05021-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/ff9fbc93d040/materials-17-05021-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/3d7c4b32dfae/materials-17-05021-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/81766117ec68/materials-17-05021-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/e5c3ca583c85/materials-17-05021-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/c8f54c905a29/materials-17-05021-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/f77a11a4baf1/materials-17-05021-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/264f6cca3367/materials-17-05021-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/c4274db9a22b/materials-17-05021-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/595682f5ec78/materials-17-05021-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/a32e3ab4bb1e/materials-17-05021-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/ff9fbc93d040/materials-17-05021-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/3d7c4b32dfae/materials-17-05021-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/81766117ec68/materials-17-05021-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/e5c3ca583c85/materials-17-05021-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/c8f54c905a29/materials-17-05021-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/f77a11a4baf1/materials-17-05021-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/264f6cca3367/materials-17-05021-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/c4274db9a22b/materials-17-05021-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f067/11509406/595682f5ec78/materials-17-05021-g010.jpg

相似文献

1
Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO Thin-Film Memristor.重置电压控制电阻状态及无形成铁掺杂钛酸锶薄膜忆阻器的应用
Materials (Basel). 2024 Oct 14;17(20):5021. doi: 10.3390/ma17205021.
2
Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.电极对钛酸锶镍酸盐电阻式随机存取存储器开关行为的影响。
Materials (Basel). 2015 Oct 26;8(10):7191-7198. doi: 10.3390/ma8105374.
3
Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO/Al/SrZrTiO/ITO with Embedded Al Layer.通过具有嵌入式铝层的Al/SrZrTiO/Al/SrZrTiO/ITO改善电阻式开关存储单元性能
Nanomaterials (Basel). 2022 Dec 10;12(24):4412. doi: 10.3390/nano12244412.
4
Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO:SiO Thin Films on Resistive Random Access Memory Devices.电阻式随机存取存储器器件上ITO:SiO薄膜共溅射的激活能和双极开关特性
Nanomaterials (Basel). 2023 Jul 26;13(15):2179. doi: 10.3390/nano13152179.
5
Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.透明氧化铟锡薄膜电阻式随机存取存储器的双极开关特性
Nanomaterials (Basel). 2023 Feb 10;13(4):688. doi: 10.3390/nano13040688.
6
Multi-Level Resistive Switching in SnSe/SrTiO Heterostructure Based Memristor Device.基于SnSe/SrTiO异质结构忆阻器器件的多级电阻开关
Nanomaterials (Basel). 2022 Jun 21;12(13):2128. doi: 10.3390/nano12132128.
7
Highly stable ITO/ZnTiO/Pt resistive random access memory and its application in two-bit-per-cell.高度稳定的氧化铟锡/锌钛氧化物/铂电阻式随机存取存储器及其在每单元两位存储中的应用。
RSC Adv. 2018 May 15;8(32):17622-17628. doi: 10.1039/c8ra03181a. eCollection 2018 May 14.
8
Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.采用低温改进方法的氧化钕阻变随机存取存储器器件的双极开关特性
Materials (Basel). 2017 Dec 12;10(12):1415. doi: 10.3390/ma10121415.
9
First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices.氧化钒薄膜电阻式随机存取存储器器件中复位状态的一级速率定律分析
Nanomaterials (Basel). 2023 Jan 1;13(1):198. doi: 10.3390/nano13010198.
10
Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.基于 SiN 的电阻式随机存取存储器中的功率和低电阻状态相关的双极性重置开关转换。
Nanoscale Res Lett. 2016 Dec;11(1):360. doi: 10.1186/s11671-016-1572-9. Epub 2016 Aug 12.

本文引用的文献

1
Revealing Resistive Switching Mechanism in CaFeO Perovskite System with Electroforming-Free and Reset Voltage-Controlled Multilevel Resistance Characteristics.揭示具有无电形成和复位电压控制多电平电阻特性的钙铁氧体钙钛矿体系中的电阻开关机制。
Small. 2022 Dec;18(51):e2205306. doi: 10.1002/smll.202205306. Epub 2022 Nov 3.
2
Hafnium Oxide (HfO ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories.氧化铪（HfO₂）——一种多功能氧化物：氧化铪在电阻式开关和铁电存储器中的前景与挑战综述
Small. 2022 Jun;18(23):e2107575. doi: 10.1002/smll.202107575. Epub 2022 May 5.
3
Effect of Alkaline Earth Metal on AZrO (A = Mg, Sr, Ba) Memory Application.
碱土金属对AZrO（A = Mg、Sr、Ba）记忆应用的影响。
Gels. 2021 Dec 27;8(1):20. doi: 10.3390/gels8010020.
4
Physics of SrTiO-based heterostructures and nanostructures: a review.基于SrTiO的异质结构和纳米结构的物理学：综述
Rep Prog Phys. 2018 Feb 9;81(3):036503. doi: 10.1088/1361-6633/aa892d.
5
Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature.钛酸锶薄膜中的电阻状态：高低温下的偏置效应及机制
J Electroceram. 2017;39(1):197-209. doi: 10.1007/s10832-017-0081-2. Epub 2017 Apr 3.
6
Redox activity of surface oxygen anions in oxygen-deficient perovskite oxides during electrochemical reactions.电化学反应中缺氧钙钛矿氧化物表面氧阴离子的氧化还原活性。
Nat Commun. 2015 Jan 19;6:6097. doi: 10.1038/ncomms7097.
7
Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.氧化锌薄膜电阻式存储的稳定机制：可控制氧分压对缺陷的影响。
Nanoscale Res Lett. 2013 Nov 16;8(1):483. doi: 10.1186/1556-276X-8-483.
8
Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices.铁掺杂钛酸锶薄膜忆阻器件中丝状与均匀电阻开关的共存
Adv Mater. 2010 Nov 16;22(43):4819-22. doi: 10.1002/adma.201001872.