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基于氟化镁的无电铸双极电阻式开关存储器

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride.

作者信息

Das Nayan C, Kim Minjae, Rani Jarnardhanan R, Hong Sung-Min, Jang Jae-Hyung

机构信息

School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Korea.

School of Energy Technology, Korea Institute of Energy Technology, Naju 58330, Korea.

出版信息

Micromachines (Basel). 2021 Aug 30;12(9):1049. doi: 10.3390/mi12091049.

DOI:10.3390/mi12091049
PMID:34577692
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8471686/
Abstract

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF) as the resistive switching layer are reported. The electroforming-free MgF based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10 and good data retention of >10 s. The resistive switching mechanism in the Ti/MgF/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgF layer. In addition, filamentary switching mode at the interface between the MgF and Ti layers is assisted by O-H group-related defects on the surface of the active layer.

摘要

报道了采用氟化镁（MgF）作为电阻开关层的无电铸电阻开关随机存取存储器（RRAM）器件。基于MgF的无电铸RRAM器件表现出双极SET/RESET操作特性，开/关比高于10，且具有大于10秒的良好数据保持能力。Ti/MgF/Pt器件中的电阻开关机制结合了两种过程以及陷阱控制的空间电荷限制传导（SCLC），这由块状MgF层中预先存在的氟空位缺陷所控制。此外，MgF和Ti层之间界面处的丝状开关模式由活性层表面与O-H基团相关的缺陷辅助。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/96b0bc438b06/micromachines-12-01049-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/b19bc642cb48/micromachines-12-01049-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/dcf3ae526d79/micromachines-12-01049-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/ad521e2a8579/micromachines-12-01049-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/564a30c6782d/micromachines-12-01049-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/db1573fb8a05/micromachines-12-01049-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/96b0bc438b06/micromachines-12-01049-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/b19bc642cb48/micromachines-12-01049-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/dcf3ae526d79/micromachines-12-01049-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/ad521e2a8579/micromachines-12-01049-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/564a30c6782d/micromachines-12-01049-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/db1573fb8a05/micromachines-12-01049-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36b7/8471686/96b0bc438b06/micromachines-12-01049-g006.jpg

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本文引用的文献

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Scalability of voltage-controlled filamentary and nanometallic resistance memory devices.电压控制丝状和纳米金属电阻存储器件的可扩展性。
Nanoscale. 2017 Aug 31;9(34):12690-12697. doi: 10.1039/c7nr02915b.
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Micromachines (Basel). 2022 Apr 12;13(4):604. doi: 10.3390/mi13040604.
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