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通过反应射频磁控溅射沉积的作为电荷转移绝缘体的NiO薄膜中的首次电阻开关重置。

Reset First Resistive Switching in NiO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering.

作者信息

Kim Dae-Woo, Kim Tae-Ho, Kim Jae-Yeon, Sohn Hyun-Chul

机构信息

Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.

Lam Research, Daesan-ro 288, Icheon-si 17336, Korea.

出版信息

Nanomaterials (Basel). 2022 Jun 29;12(13):2231. doi: 10.3390/nano12132231.

DOI:10.3390/nano12132231
PMID:35808068
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9268175/
Abstract

Reset-first resistive random access memory (RRAM) devices were demonstrated for off-stoichiometric NiO thin films deposited using reactive sputtering with a high oxygen partial pressure. The NiO based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the NiO films, and X-ray photoemission spectroscopy showed that the Ni valence state in the NiO films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the NiO films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the NiO films.

摘要

首次展示了复位优先电阻式随机存取存储器（RRAM）器件，该器件用于通过高氧分压的反应溅射沉积的非化学计量比NiO薄膜。基于NiO的RRAM器件在没有电形成步骤的情况下表现出单极和双极电阻切换特性。俄歇电子能谱显示NiO薄膜中存在镍缺陷，X射线光电子能谱显示NiO薄膜中的Ni价态随氧分压的增加而增加。导电原子力显微镜显示，在沉积过程中，NiO薄膜的电导率随氧分压的增加而增加，这可能有助于NiO薄膜的复位优先切换。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/568c06808457/nanomaterials-12-02231-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/00238282f5af/nanomaterials-12-02231-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/f0579d6e5d9a/nanomaterials-12-02231-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/e936daf7d885/nanomaterials-12-02231-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/aa3a63afb556/nanomaterials-12-02231-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/85cfdf5415dc/nanomaterials-12-02231-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/568c06808457/nanomaterials-12-02231-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/00238282f5af/nanomaterials-12-02231-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/f0579d6e5d9a/nanomaterials-12-02231-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/e936daf7d885/nanomaterials-12-02231-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/aa3a63afb556/nanomaterials-12-02231-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/85cfdf5415dc/nanomaterials-12-02231-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56f9/9268175/568c06808457/nanomaterials-12-02231-g006.jpg

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