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在碳离子束中,扰动量和 LET 依赖性对束品质校正因子的影响。

On the perturbation effect and LET dependence of beam quality correction factors in carbon ion beams.

机构信息

Department of Medical Physics, School of Medicine and Public Health, University of Wisconsin-Madison, Madison, Wisconsin, USA.

出版信息

Med Phys. 2023 Feb;50(2):1105-1120. doi: 10.1002/mp.16089. Epub 2022 Dec 26.

Abstract

BACKGROUND

In a recent study, we reported beam quality correction factors, f , in carbon ion beams using Monte Carlo (MC) methods for a cylindrical and a parallel-plate ionization chamber (IC). A non-negligible perturbation effect was observed; however, the magnitude of the perturbation correction due to the specific IC subcomponents was not included. Furthermore, the stopping power data presented in the International Commission on Radiation Units and Measurements (ICRU) report 73 were used, whereas the latest stopping power data have been reported in the ICRU report 90.

PURPOSE

The aim of this study was to extend our previous work by computing f correction factors using the ICRU 90 stopping power data and by reporting IC-specific perturbation correction factors. Possible energy or linear energy transfer (LET) dependence of the f correction factor was investigated by simulating both pristine beams and spread-out Bragg peaks (SOBPs).

METHODS

The TOol for PArticle Simulation (TOPAS)/GEANT4 MC code was used in this study. A 30 × 30 × 50 cm water phantom was simulated with a uniform 10 × 10 cm parallel beam incident on the surface. A Farmer-type cylindrical IC (Exradin A12) and two parallel-plate ICs (Exradin P11 and A11) were simulated in TOPAS using the manufacturer-provided geometrical drawings. The f correction factor was calculated in pristine carbon ion beams in the 150-450 MeV/u energy range at 2 cm depth and in the middle of the flat region of four SOBPs. The k correction factor was calculated by simulating the f correction factor in a Co beam at 5 cm depth. The perturbation correction factors due to the presence of the individual IC subcomponents, such as the displacement effect in the air cavity, collecting electrode, chamber wall, and chamber stem, were calculated at 2 cm depth for monoenergetic beams only. Additionally, the mean dose-averaged and track-averaged LET was calculated at the depths at which the f was calculated.

RESULTS

The ICRU 90 f correction factors were reported. The p correction factor was found to be significant for the cylindrical IC with magnitudes up to 1.70%. The individual perturbation corrections for the parallel-plate ICs were <1.0% except for the A11 p correction at the lowest energy. The f correction for the P11 IC exhibited an energy dependence of >1.00% and displayed differences up to 0.87% between pristine beams and SOBPs. Conversely, the f for A11 and A12 displayed a minimal energy dependence of <0.50%. The energy dependence was found to manifest in the LET dependence for the P11 IC. A statistically significant LET dependence was found only for the P11 IC in pristine beams only with a magnitude of <1.10%.

CONCLUSIONS

The perturbation and k correction factor should be calculated for the specific IC to be used in carbon ion beam reference dosimetry as a function of beam quality.

摘要

背景

在最近的一项研究中,我们使用蒙特卡罗(MC)方法报告了圆柱形和平行板电离室(IC)中碳离子束的束质校正因子 f。观察到了不可忽略的微扰效应;然而,并未包括由于特定 IC 子组件引起的微扰校正的幅度。此外,使用了国际辐射单位和测量委员会(ICRU)报告 73 中给出的阻止本领数据,而最新的阻止本领数据已在 ICRU 报告 90 中给出。

目的

本研究的目的是通过使用 ICRU 90 阻止本领数据计算 f 校正因子,并报告 IC 特定的微扰校正因子,来扩展我们之前的工作。通过模拟原始束和扩展布拉格峰(SOBP),研究了 f 校正因子的可能能量或线性能量转移(LET)依赖性。

方法

本研究使用了 TOol for PArticle Simulation(TOPAS)/GEANT4 MC 代码。在一个 30×30×50 cm 的水模体中模拟了一个均匀的 10×10 cm 平行束,该平行束在表面入射。使用制造商提供的几何图形在 TOPAS 中模拟了圆柱形 Farmer 型电离室(Exradin A12)和两个平行板电离室(Exradin P11 和 A11)。在 150-450 MeV/u 能量范围内,在 2 cm 深度和四个 SOBP 平坦区域的中间处计算了原始碳离子束中的 f 校正因子。通过在 5 cm 深度处模拟 Co 束来计算 k 校正因子。仅在单能束的情况下,在 2 cm 深度处计算了由于单个 IC 子组件(例如空气腔、收集电极、腔壁和腔杆中的位移效应)引起的扰动校正因子。此外,在计算 f 的深度处计算了平均剂量平均和轨迹平均 LET。

结果

报告了 ICRU 90 的 f 校正因子。对于圆柱形 IC,p 校正因子的幅度高达 1.70%,非常显著。除了最低能量下的 A11 p 校正因子外,平行板 IC 的各个扰动校正因子都<1.0%。P11 IC 的 f 校正因子表现出大于 1.00%的能量依赖性,并且在原始束和 SOBP 之间显示出高达 0.87%的差异。相反,A11 和 A12 的 f 表现出<0.50%的最小能量依赖性。发现能量依赖性在 P11 IC 的 LET 依赖性中表现出来。仅在原始束中,仅在 P11 IC 中发现了具有<1.10%幅度的统计学上显著的 LET 依赖性。

结论

在碳离子束参考剂量学中,应根据束质特性计算特定 IC 的微扰和 k 校正因子。

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