Shehzad Nasir, Saeed Shahzad, Shahid Ismail, Khan Imad, Saeed Imran, Zapien Juan Antonio, Zhang Lixin
School of Physics, Nankai University Tianjin 300071 People's Republic of China.
Department of Physics, Rawalpindi Women University Rawalpindi 43600 Pakistan
RSC Adv. 2022 Nov 2;12(48):31456-31465. doi: 10.1039/d2ra03439e. eCollection 2022 Oct 27.
Two-dimensional van der Waals heterostructures (vdWHs) with tunable band alignment have the potential to be benignant in the development of minimal multi-functional and controllable electronics, but they have received little attention thus far. It is crucial to characterize and control the band alignment in semiconducting vdWHs, which determines the electronic and optoelectronic properties. The future success of optoelectronic devices will require improved electronic property control techniques, such as using an external electric field or strain engineering, to change the electronic structures directly. Herein, we review heterostructures fabricated as transition metal dichalcogenides (TMDCs) as one of their constituent monolayers with other notable 2D materials that can transfer from type-II to type-III (type-III > type-II) band alignment when a biaxial strain or electric field is applied.
具有可调带隙排列的二维范德华异质结构(vdWHs)在最小化多功能和可控电子器件的发展中具有潜在优势,但迄今为止它们受到的关注较少。表征和控制半导体vdWHs中的带隙排列至关重要,因为这决定了其电子和光电特性。光电器件未来的成功将需要改进的电子特性控制技术,例如使用外部电场或应变工程来直接改变电子结构。在此,我们综述了以过渡金属二硫属化物(TMDCs)作为其组成单层之一与其他显著的二维材料制成的异质结构,当施加双轴应变或电场时,这些异质结构可以从II型转变为III型(III型>II型)带隙排列。