Wang Pan, Zong Yixin, Liu Hao, Wen Hongyu, Liu Yueyang, Wu Hai-Bin, Xia Jian-Bai
State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Phys Chem Chem Phys. 2021 Jan 21;23(2):1510-1519. doi: 10.1039/d0cp05354f.
The van der Waals heterostructure (vdWH) has attracted widespread attention as a unique structure for future electronic and optoelectronic devices. In this paper, we constructed the ZnO-SeMoS and ZnO-SMoSe vdWHs and systematically investigated their electronic structures and band alignments considering vertical strain and external electric field effects. It is found that the ZnO-SeMoS and ZnO-SMoSe vdWHs both exhibit type-II band alignment with indirect band gaps of 1.31 and 0.63 eV respectively, depending on the interface characteristics. What's more, the band alignment of these two heterostructures can be tuned to type I or type III, and their band gap can be modified to direct feature by applying vertical strain and an electric field. The results reveal that ZnO/MoSSe vdWHs have promising potential in multi-functional nanodevices, and provide a way to modify the electronic properties of Janus-based heterojunctions using interface characteristics.
范德华异质结构（vdWH）作为一种用于未来电子和光电器件的独特结构，已引起广泛关注。在本文中，我们构建了ZnO-SeMoS和ZnO-SMoSe范德华异质结构，并考虑垂直应变和外部电场效应，系统地研究了它们的电子结构和能带排列。结果发现，ZnO-SeMoS和ZnO-SMoSe范德华异质结构均呈现II型能带排列，间接带隙分别为1.31和0.63电子伏特，这取决于界面特性。此外，通过施加垂直应变和电场，这两种异质结构的能带排列可以调整为I型或III型，并且它们的带隙可以改变为直接带隙特性。结果表明，ZnO/MoSSe范德华异质结构在多功能纳米器件中具有广阔的应用前景，并提供了一种利用界面特性来改变基于Janus的异质结电子性质的方法。
