Wei Yichen, Liu Wanrong, Yu Jinran, Li Yonghai, Wang Yifei, Huo Ziwei, Cheng Liuqi, Feng Zhenyu, Sun Jia, Sun Qijun, Wang Zhong Lin
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing101400, P. R. China.
Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China.
ACS Nano. 2022 Nov 22;16(11):19199-19209. doi: 10.1021/acsnano.2c08420. Epub 2022 Nov 10.
Triboelectric potential gated transistors have inspired various applications toward mechanical behavior controlled logic circuits, multifunctional sensors, artificial sensory neurons, . Their rapid development urgently calls for high-performance devices and corresponding figure of merits to standardize the tribotronic gating properties. Organic semiconductors paired with solution processability promise low-cost manufacture of high-performance tribotronic transistor devices/arrays. Here, we demonstrate a record high-performance tribotronic transistor array composed of an integrated triboelectric nanogenerator (TENG) and a large-area device array of C8-BTBT-PS transistors. The working mechanism of effective triboelectric potential gating is elaborately explained from the aspect of conjugated energy bands of the contact-electrification mediums and organic semiconductors. Driven by the triboelectric potential, the tribotronic transistor shows superior properties of record high current on/off ratios (>10), a steep subthreshold swing (29.89 μm/dec), high stability, and excellent reproducibility. Moreover, tribotronic logic devices modulated by mechanical displacement have also been demonstrated with good stability and a high gain of 1260 V/mm. The demonstrated large-area tribotronic transistor array of organic semiconductor exhibits record high performance and offers an effective R&D platform for mechano-driven electronic terminals, interactive intelligent system, artificial robotic skin, .
摩擦电势门控晶体管已激发了在机械行为控制逻辑电路、多功能传感器、人工感觉神经元等方面的各种应用。它们的快速发展迫切需要高性能器件及相应的品质因数来规范摩擦电子学的门控特性。与溶液可加工性相结合的有机半导体有望实现高性能摩擦电子晶体管器件/阵列的低成本制造。在此，我们展示了一种由集成摩擦纳米发电机（TENG）和大面积C8-BTBT-PS晶体管器件阵列组成的创纪录高性能摩擦电子晶体管阵列。从接触起电介质和有机半导体的共轭能带方面详细解释了有效摩擦电势门控的工作机制。在摩擦电势驱动下，摩擦电子晶体管表现出创纪录的高电流开/关比（>10）、陡峭的亚阈值摆幅（29.89 μm/dec）、高稳定性和出色的可重复性等优异特性。此外还展示了由机械位移调制的摩擦电子逻辑器件，具有良好的稳定性和1260 V/mm的高增益。所展示的大面积有机半导体摩擦电子晶体管阵列展现出创纪录的高性能，并为机械驱动电子终端、交互式智能系统、人工机器人皮肤等提供了一个有效的研发平台。
