Shin Hyunji, Kim Dae Yu
School of Semiconductor Display Technology, Hallym University, Chuncheon 24252, Republic of Korea.
Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea.
iScience. 2024 Jan 26;27(2):109029. doi: 10.1016/j.isci.2024.109029. eCollection 2024 Feb 16.
Concern for the environment is one of the main factors that are increasing the demand for compact and energy-efficient electronic devices. Recent research has made advances in reducing the power consumption of field-effect transistors, including the use of high-dielectric insulators, low-voltage operation, and selective power-conservation strategies. This paper introduces a revolutionary air-friction-driven rotating gate transistor that operates without the need for a conventional gate voltage. This new device offers the advantages of wear resistance, a slim and flexible design (achieved through low-temperature solution processing), and a simplified three-layer structure that streamlines manufacturing and reduces potential carbon emissions. This device's wear resistance and ease of fabrication render the device a promising technology with applications in various fields, including electronics, vehicles, aviation, and wearable devices. This study provides evidence of the device's feasibility for use in real-world vehicular scenarios, underscoring its potential for future innovation and widespread adoption.
对环境的关注是推动对紧凑且节能的电子设备需求增长的主要因素之一。最近的研究在降低场效应晶体管的功耗方面取得了进展，包括使用高介电常数绝缘体、低电压操作和选择性节能策略。本文介绍了一种革命性的空气摩擦驱动旋转栅晶体管，其工作无需传统的栅极电压。这种新器件具有耐磨、设计轻薄灵活（通过低温溶液处理实现）以及简化的三层结构等优点，简化了制造过程并减少了潜在的碳排放。该器件的耐磨性和易于制造使其成为一种有前途的技术，可应用于包括电子、车辆、航空和可穿戴设备在内的各个领域。这项研究证明了该器件在实际车辆场景中使用的可行性，突出了其未来创新和广泛应用的潜力。
