Departamento de Física de Materiales, Facultad de Física, Universidad Complutense de Madrid, Pl. Ciencias, 1, 28040 Madrid, Spain.
Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, United States.
ACS Appl Mater Interfaces. 2022 Dec 14;14(49):54961-54968. doi: 10.1021/acsami.2c16950. Epub 2022 Dec 5.
Controlling the magnetic ground states at the nanoscale is a long-standing basic research problem and an important issue in magnetic storage technologies. Here, we designed a nanostructured material that exhibits very unusual hysteresis loops due to a transition between vortex and double pole states. Arrays of 700 nm diamond-shaped nanodots consisting of Py(30 nm)/Ru()/Py(30 nm) (Py, permalloy (NiFe)) trilayers were fabricated by interference lithography and e-beam evaporation. We show that varying the Ru interlayer spacer thickness () governs the interaction between the Py layers. We found this interaction mainly mediated by two mechanisms: magnetostatic interaction that favors antiparallel (antiferromagnetic, AFM) alignment of the Py layers and exchange interaction that oscillates between ferromagnetic (FM) and AFM couplings. For a certain range of Ru thicknesses, FM coupling dominates and forms magnetic vortices in the upper and lower Py layers. For Ru thicknesses at which AFM coupling dominates, the magnetic state in remanence is a double pole structure. Our results showed that the interlayer exchange coupling interaction remains finite even at 4 nm Ru thickness. The magnetic states in remanence, observed by magnetic force microscopy (MFM), are in good agreement with corresponding hysteresis loops obtained by the magneto-optic Kerr effect (MOKE) and micromagnetic simulations.
控制纳米尺度的磁基态是一个长期存在的基础研究问题,也是磁存储技术中的一个重要问题。在这里,我们设计了一种纳米结构材料,由于涡旋和双磁极状态之间的转变,它表现出非常不寻常的滞后环。由 Py(30nm)/Ru()/Py(30nm)(Py,坡莫合金(NiFe))三层膜组成的 700nm 菱形纳米点阵列通过干涉光刻和电子束蒸发制备而成。我们表明,改变 Ru 夹层间隔厚度()控制着 Py 层之间的相互作用。我们发现这种相互作用主要由两种机制介导:磁静磁相互作用有利于 Py 层的反平行(反铁磁,AFM)排列,以及交换相互作用在铁磁(FM)和 AFM 耦合之间振荡。在一定的 Ru 厚度范围内,FM 耦合占主导地位,并在上部和下部 Py 层中形成磁涡旋。对于 AFM 耦合占主导地位的 Ru 厚度,剩余磁状态是双磁极结构。我们的结果表明,即使在 4nm Ru 厚度下,层间交换耦合相互作用仍然保持有限。通过磁力显微镜(MFM)观察到的剩余磁状态与通过磁光克尔效应(MOKE)和微磁模拟获得的相应滞后环非常吻合。