Mishra Nirmalendu S, Saravanan Pichiah
Environmental Nanotechnology Laboratory, Department of Environmental Science and Engineering, Indian Institute of Technology (ISM), Dhanbad-826004, Jharkhand, India.
Beilstein J Nanotechnol. 2022 Nov 22;13:1380-1392. doi: 10.3762/bjnano.13.114. eCollection 2022.
The present study outlines the transformation of non-photoresponsive hexagonal boron nitride (HBN) into a visible-light-responsive material. The carbon modification was achieved through a solid-state reaction procedure inside a tube furnace under nitrogen atmosphere. In comparison to HBN (bandgap of 5.2 eV), the carbon-modified boron nitride could efficiently absorb LED light irradiation with a light harvesting efficiency of ≈90% and a direct bandgap of 2 eV. The introduction of carbon into the HBN lattice led to a significant change in the electronic environment through the formation of C-B and C-N bonds which resulted in improved visible light activity, lower charge transfer resistance, and improved charge carrier density (2.97 × 10 cm). This subsequently enhanced the photocurrent density (three times) and decreased the photovoltage decay time (two times) in comparison to those of HBN. The electronic band structure (obtained through Mott-Schottky plots) and charge trapping analysis confirmed the dominance of e, O , and OH as dominant reactive oxygen species. The carbon modification could effectively remove 93.83% of methylene blue (MB, 20 ppm solution) and 48.56% of phenol (10 ppm solution) from the aqueous phase in comparison to HBN which shows zero activity in the visible region.
本研究概述了将非光响应性六方氮化硼(HBN)转变为可见光响应性材料的过程。碳改性是通过在氮气气氛下的管式炉内进行固态反应程序实现的。与HBN(带隙为5.2 eV)相比,碳改性氮化硼能够有效吸收LED光照射,光捕获效率约为90%,直接带隙为2 eV。将碳引入HBN晶格通过形成C-B键和C-N键导致电子环境发生显著变化,从而提高了可见光活性、降低了电荷转移电阻并提高了电荷载流子密度(2.97×10 cm)。与HBN相比,这随后提高了光电流密度(三倍)并缩短了光电压衰减时间(两倍)。电子能带结构(通过莫特-肖特基图获得)和电荷俘获分析证实了e、O和OH作为主要活性氧物种的主导地位。与在可见光区域显示零活性的HBN相比,碳改性能够有效地从水相中去除93.83%的亚甲基蓝(MB,20 ppm溶液)和48.56%的苯酚(10 ppm溶液)。