The Department of Chemistry, Fudan University, Shanghai, 20433, China.
The Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 20433, China.
Sci Rep. 2017 Apr 3;7:45584. doi: 10.1038/srep45584.
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries (GBs) engineering in the basal plane. The other way is to invite foreign atoms, such as carbon, to forge bizarre hybrid structures like hetero-junctions or semiconducting h-BNC materials. Here we successfully developed a general chemical method to synthesize these different h-BN derivatives, showcasing how the chemical structure can be manipulated with or without a graphene precursor, and the bandgap be tuned to ~2 eV, only one third of the pristine one's.
单层六方氮化硼（h-BN）具有约 6eV 的宽带隙。缩小带隙在技术上具有吸引力，但在化学方面却带来了巨大的挑战。一种策略是拓扑重构 h-BN 的六方结构，这涉及到基面中的缺陷或晶界（GB）工程。另一种方法是引入外来原子，如碳，来构建奇异的杂化结构，如异质结或半导体 h-BNC 材料。在这里，我们成功地开发了一种通用的化学方法来合成这些不同的 h-BN 衍生物，展示了如何在没有或有石墨烯前体的情况下操纵化学结构，并将带隙调谐到~2eV，仅为原始带隙的三分之一。
